參數(shù)資料
型號: BB130
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: AM variable capacitance diode
中文描述: 450 pF, 32 V, SILICON, VARIABLE CAPACITANCE DIODE, TO-92
封裝: PLASTIC, TO-92 VARIANT, 2 PIN
文件頁數(shù): 2/4頁
文件大?。?/td> 29K
代理商: BB130
1996 May 03
2
Philips Semiconductors
Product specification
AM variable capacitance diode
BB130
FEATURES
Matched to 3%
Leaded plastic package
C28: 18 pF; ratio: 27.
APPLICATIONS
Electronic tuning in AM radio
applications
VCO.
DESCRIPTION
The BB130 is a variable capacitance
diode, fabricated in planar
technology, and encapsulated in the
SOD69 (TO-92 variant) leaded plastic
package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
R
I
F
T
stg
T
j
continuous reverse voltage
55
55
30
V
continuous forward current
storage temperature
50
mA
°
C
°
C
+125
operating junction temperature
+85
Fig.1 Simplified outline (SOD69; TO-92 variant) and symbol.
handbook, halfpage
MAM222
k
a
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C; unless otherwise specified.
Notes
1.
2.
V
R
= 1 V.
For a set of 2 diodes.
SYMBOL
PARAMETER
CONDITIONS
MIN.
450
TYP.
MAX.
UNIT
I
R
reverse current
V
R
= 30 V; see Fig.3
V
R
= 30 V; T
j
= 85
°
C; see Fig.3
f = 1 MHz; note 1
V
R
= 1 V; f = 1 MHz; see Figs 2 and 4
V
R
= 28 V; f = 1 MHz; see Figs 2 and 4
f = 1 MHz
50
nA
300
2
550
21
nA
pF
r
s
C
d
diode series resistance
diode capacitance
12
23
pF
capacitance ratio
capacitance matching
V
R
= 1 to 28 V; note 2
3
%
C
C
d 28V
C
d
)
)
--------------------
d
--C
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