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參數(shù)資料
| 型號(hào)： | BAY80-TAP |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | DIODE 0.2 A, 150 V, SILICON, SIGNAL DIODE, DO-35, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-2, Signal Diode |
| 中文描述： | Diodes (General Purpose, Power, Switching) 150 Volt 100mA 1.0 Amp IFSM |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 100K |
| 代理商： | BAY80-TAP |
BAY80
Document Number 85553
Rev. 1.9, 17-Aug-10
Vishay Semiconductors
www.vishay.com
1
94 9367
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
Small Signal Switching Diode, High Voltage
Features
Silicon Epitaxial Planar Diode
AEC-Q101 qualified
Compliant to RoHS directive 2002/95/EC
and in accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
definition
Applications
General purpose
Mechanical Data
Case:
DO-35
Weight:
approx. 125 mg
Cathode band color:
black
Packaging codes/options:
TR/10 k per 13" reel (52 mm tape), 50 k/box
TAP/10 k per Ammopack (52 mm tape), 50 k/box
Parts Table
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Repetitive peak reverse voltage
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to ambient air
Part
Ordering code
Type Marking
Remarks
BAY80
BAY80-TR or BAY80-TAP
BAY80
Tape and Reel/Ammopack
Test condition
Symbol
V
RRM
V
R
I
FSM
I
FRM
I
F
I
FAV
Value
150
Unit
V
Reverse voltage
120
V
Peak forward surge current
t
p
= 1 μs
1
A
Repetitive peak forward current
625
mA
Forward continuous current
250
mA
Average forward current
200
mA
Test condition
l = 4 mm, T
L
= constant
Symbol
R
thJA
T
j
T
stg
Value
350
Unit
K/W
Junction to ambient air
+ 175
°C
Storage temperature range
- 65 to + 175
°C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BAY80-TR | 功能描述:二極管 - 通用，功率，開(kāi)關(guān) 150 Volt 100mA 1.0 Amp IFSM RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| BAY82 | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:Ultra Fast Switching Diodes |
| BAYONET BASE | 制造商:FULLEON 功能描述:BASE BAYONET |
| BAYP17 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:DIODY IMPULSOWE |
| BAYP18 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:DIODY IMPULSOWE |
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