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參數(shù)資料
| 型號(hào)： | BAV99A |
| 英文描述： | Delta39K™ ISR™ CPLDs at FPGA Densities™ |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 45K |
| 代理商： | BAV99A |
B
Electrical Characteristics
TA = 25°C unless otherwise noted
Typical Characteristics
Symbol
Parameter
Test Conditions
Min
Max
Units
B
V
I
R
Breakdown Voltage
Reverse Current
I
R
= 100
μ
A
V
R
= 70 V
V
R
= 25 V, T
A
= 150
°
C
V
R
= 70 V, T
A
= 150
°
C
I
F
= 1.0 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
V
R
= 0, f
= 1.0 MHz
I
F
= I
R
= 10 mA, I
RR
= 1.0 mA,
R
L
= 100
I
F
= 10 mA, t
r
= 20 nS
70
V
μ
A
μ
A
μ
A
mV
mV
V
V
pF
nS
2.5
30
50
715
855
1.0
1.25
1.5
6.0
V
F
Forward Voltage
C
O
T
RR
Diode Capacitance
Reverse Recovery Time
V
FM
Peak Forward Voltage
1.75
V
50
0
05
REVERSE VOLTAGE vs REVERSE CURRENT
BV - 1.0 to 100 uA
150
R
V
R
1
2
3
5
10
20
30
50
100
110
120
130
140
I - REVERSE CURRENT (uA)
Ta= 25°C
R
Ta= 25°C
1N4150 MMBD1201 1205
REVERSE CURRENT vs REVERSE VOLTAGE
IR - 10 to 100 V
I
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
10
20
30
50
70
100
0
50
100
150
200
250
300
225
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 1.0 to 100 uA
485
Ta= 25°C
1
2
3
5
10
20
30
50
100
250
300
350
400
450
I - FORWARD CURRENT (uA)
I
F
V
V
F
F
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 0.1 to 10 mA
725
Ta= 25°C
0.1
0.2 0.3
0.5
1
2
3
5
10
450
500
550
600
650
700
I - FORWARD CURRENT (mA)
V
F
V
F
High Conductance Ultra Fast Diode
(continued)
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