參數(shù)資料
型號: BAV73
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Dual high-speed switching diode in common cathode configuration
中文描述: 0.2 A, 250 V, 2 ELEMENT, SILICON, SIGNAL DIODE
文件頁數(shù): 2/8頁
文件大小: 47K
代理商: BAV73
1997 May 06
2
Philips Semiconductors
Preliminary specification
Dual high-speed switching diode
in common cathode configuration
BAV73
FEATURES
Plastic SMD package
High switching speed
Common cathode configuration.
APPLICATIONS
General.
DESCRIPTION
Dual diode in a common cathode
configuration in a small rectangular
SMD SOT23 package.
PINNING SOT23
PIN
DESCRIPTION
1
2
3
anode 1
anode 2
common cathode
Fig.1 Simplified outline and symbol.
Marking code:
JBp.
handbook, 4 columns
2
1
3
Top view
MAM108
2
1
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
V
RRM
V
R
I
F(AV)
I
F
I
FRM
I
FSM
repetitive peak reverse voltage
continuous reverse voltage
average forward current
continuous forward current
repetitive peak forward current
non-repetitive peak forward
current
65
250
200
200
200
625
9
3
1.7
250
+150
150
V
V
mA
mA
mA
A
A
A
mW
°
C
°
C
average over any 20 ms period; t
p
0.5 ms
t = 1
μ
s
t = 100
μ
s
t = 10 ms
T
amb
= 25
°
C; note 1
P
tot
T
stg
T
j
total power dissipation
storage temperature
junction temperature
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