參數(shù)資料
型號: BAV70WT1
廠商: 樂山無線電股份有限公司
英文描述: Dual Switching Diodes
中文描述: 雙開關(guān)二極管
文件頁數(shù): 1/4頁
文件大?。?/td> 94K
代理商: BAV70WT1
Semiconductor Group
164
Silicon Switching Diode Array
BAV 70
Maximum Ratings per Diode
Type
Ordering Code
(tape and reel)
Q68000-A6622
Marking
Package
1)
Pin Configuration
BAV 70
A4s
SOT-23
Parameter
Reverse voltage
Peak reverse voltage
Symbol
Values
70
70
Unit
V
V
R
Forward current
Surge forward current,
t
= 1
μ
s
I
F
200
4.5
mA
A
Junction temperature
Storage temperature range
T
j
150
– 65 … + 150
C
Total power dissipation,
T
S
= 35 C
P
tot
250
mW
T
stg
V
RM
I
FS
Thermal Resistance
Junction - ambient
2)
Junction - soldering point
R
th JA
600
K/W
R
th JS
460
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm
×
40 mm
×
1.5 mm/6 cm
2
.
G
For high-speed switching
G
Common cathode
1
2
3
5.91
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