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參數資料
| 型號： | BAT49 |
| 廠商： | 意法半導體 |
| 英文描述： | Small Signal Schottky Diode(小信號肖特基二極管) |
| 中文描述： | 小信號肖特基二極管（小信號肖特基二極管） |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 88K |
| 代理商： | BAT49 |
BAT 49
SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION
General purpose metal to silicon diode featuring
very low turn-on voltage and fast switching.
This device has integrated protection against ex-
cessive voltage such as electrostatic discharges.
November 1994
DO 41
(Glass)
Symbol
Parameter
Value
Unit
V
RRM
Repetitive Peak Reverse Voltage
80
V
I
F
Forward Continuous Current*
T
a
= 70
°
C
500
mA
I
FRM
Repetitive Peak Forward Current*
t
p
= 1s
δ ≤
0.5
3
A
I
FSM
Surge non Repetitive Forward Current*
t
p
≤
10ms
10
A
T
stg
T
j
Storage and Junction Temperature Range
- 65 to 150
- 65 to 125
°
C
°
C
T
L
Maximum Lead Temperature for Soldering during 10s at 4mm
from Case
230
°
C
ABSOLUTE RATINGS
(limiting values)
Symbol
R
th(j-a)
Test Conditions
Value
110
Unit
°
C/W
Junction-ambient*
THERMAL RESISTANCE
* On infinite heatsink with 4mm lead length
** Pulse test: t
p
≤
300
μ
s
δ
<
2%
.
Symbol
I
R
* *
V
F
* *
Test Conditions
V
R
= 80V
I
F
= 10mA
I
F
= 100mA
I
F
= 1A
Min.
Typ.
Max.
200
0.32
0.42
1
Unit
μ
A
V
T
j
= 25
°
C
T
j
= 25
°
C
T
j
= 25
°
C
T
j
= 25
°
C
STATIC CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Symbol
C
Test Conditions
f = 1MHz
Min.
Typ.
120
35
Max.
Unit
pF
T
j
= 25
°
C
V
R
= 0V
V
R
= 5V
DYNAMIC CHARACTERISTICS
1/4
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