參數(shù)資料
型號(hào): BAT46-TR
廠商: VISHAY SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Diode Small Signal Schottky 100V 0.15A 2-Pin DO-35 T/R
中文描述: Schottky (Diodes & Rectifiers) 100 Volt 150mA 750mA IFSM
文件頁(yè)數(shù): 1/4頁(yè)
文件大小: 76K
代理商: BAT46-TR
BAT46
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 06-May-13
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
1
Document Number: 85662
Small Signal Schottky Diode
MECHANICAL DATA
Case:
DO-35
Weight:
approx. 125 mg
Cathode band color:
Black
Packaging codes/options:
TR/10K per 13" reel (52 mm tape), 50K/box
TAP/10K per ammopack (52 mm tape), 50K/box
FEATURES
For general purpose applications
This diode features very low turn-on voltage and
fast switching. This device is protected by a PN
junction guard ring against excessive voltage,
such as electrostatic discharges
This diode is also available in the SOD-123 case
with type designation BAT46W-V and in the
MiniMELF case with type designations LL46
AEC-Q101 qualified
Material categorization: For definitions of compliance
please see
www.vishay.com/doc99912
Note
(1)
Valid provided that electrodes are kept at ambient temperature
PARTS TABLE
PART
BAT46
ORDERING CODE
BAT46-TR or BAT46-TAP
INTERNAL CONSTRUCTION
Single diode
TYPE MARKING
BAT46
REMARKS
Tape and reel/ammopack
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Repetitive peak reverse voltage
Forward continuous current
(1)
Repetitive peak forward current
(1)
Surge forward current
(1)
Power dissipation
(1)
TEST CONDITION
SYMBOL
V
RRM
I
F
I
FRM
I
FSM
P
tot
VALUE
100
150
350
750
150
UNIT
V
mA
mA
mA
mW
t
p
< 1 s,
< 0.5
t
p
< 10 ms
T
amb
= 80 °C
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Valid provided that electrodes are
TEST CONDITION
SYMBOL
VALUE
UNIT
Thermal resistance junction to ambient air
kept at ambient temperature
R
thJA
300
K/W
Junction temperature
Ambient operating temperature range
Storage temperature range
T
j
125
°C
°C
°C
T
amb
T
stg
- 65 to + 125
- 65 to + 150
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