參數(shù)資料
型號: BAT254
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Schottky Barrier Diodes
中文描述: 0.2 A, SILICON, SIGNAL DIODE
封裝: CERAMIC PACKAGE-2
文件頁數(shù): 2/8頁
文件大小: 50K
代理商: BAT254
1999 Apr 22
2
Philips Semiconductors
Product specification
Schottky barrier diode
BAT254
FEATURES
Low forward voltage
Guard ring protected
Very small ceramic SMD package.
APPLICATIONS
Ultra high-speed switching
Voltage clamping
Protection circuits
Blocking diodes.
DESCRIPTION
Planar Schottky barrier diode encapsulated in a SOD110 very small ceramic
SMD package.
Fig.1 Simplified outline (SOD110) and symbol.
handbook, 4 columns
MAM214
k
a
cathode mark
top view
side view
bottom view
k
Marking code:
L4.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
R
I
F
I
FRM
I
FSM
T
stg
T
j
T
amb
continuous reverse voltage
65
65
30
V
continuous forward current
repetitive peak forward current
200
mA
t
p
1 s;
δ ≤
0.5
t
p
<
10 ms
300
mA
non-repetitive peak forward current
600
mA
°
C
°
C
°
C
storage temperature
+150
junction temperature
125
operating ambient temperature
+125
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