參數(shù)資料
型號(hào): BAT20J
廠商: 意法半導(dǎo)體
英文描述: HIGH EFFICIENCY SWITCHING AND ULTRA LOW LEAKAGE CURRENT SCHOTTKY DIODE
中文描述: 高效率開關(guān)以及超低漏電流肖特基二極管
文件頁(yè)數(shù): 3/5頁(yè)
文件大小: 54K
代理商: BAT20J
BAT20J
3/5
I (A)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
25
50
75
100
125
150
T
(°C)
amb
T
δ
=tp/T
tp
Printed circuit board FR4
S
=2.25mm
CU
2
Fig. 1:
Peak forward current versus ambient
temperature (
δ
= 0.11).
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0
25
50
75
100
125
150
I
(A)
F(AV)
T
δ
=tp/T
tp
T
(°C)
amb
Printed circuit board FR4
S
=2.25mm
CU
2
Fig. 2:
Average forward current versus ambient
temperature (
δ
= 0.5).
1.E-03
1.E-02
1.E-01
1.E+00
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
Z
/R
th(j-a)
th(j-a)
t (s)
Single pulse
S
=2.25mm
CU
2
Fig. 3:
Relative variation of thermal impedance
junction to ambient versus pulse duration .
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
1.E+04
0
25
50
75
100
125
150
I (T
j
I (T
j
) /
=25°C
)
T (°C)
V =5V
Fig. 5:
Relative variation of reverse leakage
currrent versus junction temperature (typical
values).
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
1.E+04
0
2
4
6
8
10
12
14
16
18
20
22
24
I (μA)
V (V)
T=25°C
j
T=85°C
T=150°C
Fig. 4:
Reverse leakage currrent versus reverse
voltage applied (typical values).
1
10
100
1
10
100
C(pF)
V (V)
F=1MHz
=30mV
T=25°C
j
V
OSC
RMS
Fig. 6:
Junction capacitance versus reverse
voltage applied (typical values).
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