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參數(shù)資料
| 型號： | BAT19 |
| 廠商： | 意法半導體 |
| 英文描述： | Small Signal Schottky Diode(小信號肖特基二極管) |
| 中文描述： | 小信號肖特基二極管（小信號肖特基二極管） |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 61K |
| 代理商： | BAT19 |
BAT 19
SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION
Metal to silicon junction diode primarly intended for
UHF mixers and ultrafast switching applications.
Matched batches are available on request.
November 1994
DO 35
(Glass)
Symbol
V
RRM
I
F
I
FSM
T
stg
T
j
T
L
Parameter
Value
10
30
60
Unit
V
mA
mA
°
C
°
C
°
C
Repetitive Peak Reverse Voltage
Forward Continuous Current*
Surge non Repetitive Forward Current*
Storage and Junction Temperature Range
T
a
= 25
°
C
t
p
≤
1s
- 65 to + 150
- 65 to + 125
230
Maximum Lead Temperature for Soldering during 10s at 4mm
f rom Case
ABSOLUTE MAXIMUM RATINGS
(limiting values)
Symbol
R
th(j-a)
Test Conditions
Value
400
Unit
°
C/W
Junction-ambient*
THERMAL RESISTANCE
* On infinite heatsink with 4mm lead length
(1) Pulse test: t
≤
300
μ
s
δ
<
2%
.
(2) Noise figure test :
- diode is inserted in a tuned stripline circuit
- local oscillator frequency 1GHz
- local oscillator power 1mW
- intermediate frequency amplifier, tuned on 30MHz, has a noise figure 1.5dB
Matched batches available on request. Test conditions (forward voltage and/or capacitance) according to customer specification.
Symbol
V
BR
V
F
(1)
Test Conditions
I
R
= 10
μ
A
I
F
= 1mA
I
F
= 20mA
V
R
= 5V
Min.
10
Typ.
Max.
Unit
V
V
T
amb
= 25
°
C
T
amb
= 25
°
C
T
amb
= 25
°
C
T
amb
= 25
°
C
0.4
1
0.1
I
R
(1)
μ
A
STATIC CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Symbol
C
τ
F (2)
Test Conditions
V
R
= 0V
I
F
= 20mA
f = 1GHz
Min.
Typ.
Max.
1.2
Unit
pF
T
amb
= 25
°
C
T
amb
= 25
°
C
T
amb
= 25
°
C
f = 1GHz
Krakauer Method
100
ps
dB
6
DYNAMIC CHARACTERISTICS
1/3
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