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參數(shù)資料
| 型號： | BAT140S |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Schottky Barrier (Double) Diodes |
| 中文描述： | 1 A, 2 ELEMENT, SILICON, SIGNAL DIODE |
| 封裝： | PLASTIC, SC-73, 4 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 71K |
| 代理商： | BAT140S |
1997 Oct 03
3
Philips Semiconductors
Product specification
Schottky barrier double diodes
BAT140 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1.
2.
Refer to SOT223 standard mounting conditions.
For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power
losses P
R
are a significant part of the total power losses. Nomograms for determination of the reverse power losses
P
R
and I
F(AV)
rating will be available on request.
ELECTRICAL CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
Note
1.
Pulsed test: t
p
= 300
μ
s;
δ
= 0.02.
THERMAL CHARACTERISTICS
Note
1.
Refer to SOT223 standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
V
R
I
F
I
F(AV)
continuous reverse voltage
40
V
continuous forward current
1
A
average forward current
T
amb
= 65
°
C;
R
th j-a
= 80 K/W; note 1;
V
R(equiv)
= 0.2 V; note 2
t = 8.3
μ
s half sinewave;
JEDEC method
t
p
= 100
μ
s
1
A
I
FSM
non-repetitive peak forward current
10
A
I
RSM
T
stg
T
j
non-repetitive peak reverse current
65
0.5
A
°
C
°
C
storage temperature
+150
junction temperature
125
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Per diode
V
F
forward voltage
see Fig.5
I
F
= 100 mA; note 1
I
F
= 1 A; note 1
V
R
= 10 V; note 1; see Fig.6
V
R
= 40 V; note 1; see Fig.6
V
R
= 4 V; f = 1 MHz; see Fig.7
280
330
mV
460
500
mV
μ
A
μ
A
I
R
reverse current
15
40
60
300
C
d
diode capacitance
65
80
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
100
K/W
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