參數(shù)資料
型號: BAT140
廠商: NXP Semiconductors N.V.
英文描述: 0.182 MEGO 0.5% 1/8 W
中文描述: 雙肖特基勢壘二極管
文件頁數(shù): 4/8頁
文件大?。?/td> 71K
代理商: BAT140
1997 Oct 03
4
Philips Semiconductors
Product specification
Schottky barrier double diodes
BAT140 series
GRAPHICAL DATA
(1) T
amb
= 125
°
C.
(2) T
amb
= 100
°
C.
(3) T
amb
= 75
°
C.
(4) T
amb
= 25
°
C.
Fig.5
Forward current as a function of forward
voltage; typical values.
handbook, halfpage
IF
(mA)
10
2
10
3
10
1
0
MLC388
0.6
0.8
0.4
0.2
1.0
VF
(4)
(1)
(2)
(3)
(1) T
amb
= 125
°
C.
(2) T
amb
= 100
°
C.
(3) T
amb
= 75
°
C.
(4) T
amb
= 25
°
C.
Fig.6
Reverse current as a function of reverse
voltage; typical values.
handbook, halfpage
IR
(
μ
A)
10
2
10
3
10
1
0
MLC389
30
20
10
40
(4)
(1)
(2)
(3)
VR
Fig.7
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz.
handbook, halfpage
3
10
2
10
0
MLC390
16
24
32
8
40
VR
Cd
(pF)
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