參數(shù)資料
型號(hào): BAS70W
廠商: Diodes Inc.
英文描述: SURFACE MOUNT SCHOTTKY BARRIER DIODE
中文描述: 表面貼裝肖特基勢(shì)壘二極管
文件頁(yè)數(shù): 4/8頁(yè)
文件大小: 55K
代理商: BAS70W
1999 Mar 26
4
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAS70W series
GRAPHICAL DATA
(1) T
amb
= 125
°
C.
(2) T
amb
= 85
°
C.
(3) T
amb
= 25
°
C.
(4) T
amb
=
40
°
C.
Fig.6
Forward current as a function of forward
voltage; typical values.
10
0
0.2
0.4
0.6
0.8
1
1
IF
(mA)
F
MRA803
(1)
(4)
(2)
(3)
10
2
10
1
10
2
(1) T
amb
= 125
°
C.
(2) T
amb
= 85
°
C.
(3) T
amb
= 25
°
C.
Fig.7
Reverse current as a function of reverse
voltage; typical values.
MRA805
1
10
10
0
20
40
60
80
R
IR
(
μ
A)
(1)
(3)
(2)
2
10
1
10
2
10
3
f = 10 kHz.
Fig.8
Differential forward resistance as a function
of forward current; typical values.
10
1
10
1
1
10
rdiff
IF (mA)
MRA802
10
2
10
2
10
3
Fig.9
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
amb
= 25
°
C.
0
0.5
1
1.5
2
0
20
40
60
80
MRA804
Cd
(pF)
VR
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