參數(shù)資料
型號(hào): BAS70W-05W
廠商: NXP Semiconductors N.V.
英文描述: Schottky Barrier (Double) Diodes
中文描述: 肖特基勢(shì)壘(雙)二極管
文件頁(yè)數(shù): 3/8頁(yè)
文件大?。?/td> 55K
代理商: BAS70W-05W
1999 Mar 26
3
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAS70W series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
Note
1.
Pulse test: t
p
= 300
μ
s;
δ
= 0.02.
THERMAL CHARACTERISTICS
Note
1.
Refer to SOT323 standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
V
R
I
F
I
FRM
I
FSM
T
stg
T
j
T
amb
continuous reverse voltage
65
65
70
V
continuous forward current
repetitive peak forward current
70
mA
t
p
1 s;
δ ≤
0.5
t
p
<
10 ms
70
mA
non-repetitive peak forward current
100
mA
°
C
°
C
°
C
storage temperature
+150
junction temperature
150
operating ambient temperature
+150
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
V
F
forward voltage
see Fig.6
I
F
= 1 mA
I
F
= 10 mA
I
F
= 15 mA
V
R
= 50 V; note 1; see Fig.7
V
R
= 70 V; note 1; see Fig.7
I
F
= 5 mA
f = 1 MHz; V
R
= 0; see Fig.9
410
mV
750
mV
1
V
nA
μ
A
I
R
reverse current
100
10
τ
C
d
charge carrier life time (Krakauer method)
100
ps
diode capacitance
2
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
625
K/W
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