參數(shù)資料
型號(hào): BAS56
廠商: CENTRAL SEMICONDUCTOR CORP
元件分類: 參考電壓二極管
英文描述: DUAL HIGH CURRENT SWITCHING DIODE
中文描述: 0.2 A, 60 V, 2 ELEMENT, SILICON, SIGNAL DIODE
封裝: PLASTIC PACKAGE-4
文件頁數(shù): 1/2頁
文件大?。?/td> 93K
代理商: BAS56
60
Ce nt ra l
S e m ico nd uct o r Co rp .
TM
SOT-143 CASE
BAS56
DUAL HIGH CURRENT
SWITCHING DIODE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BAS56
type is an ultra-high speed silicon switching
diode manufactured by the epitaxial planar
process, in an epoxy molded surface mount
package with isolated dual diodes, designed
for high current, high speed switching
applications.
Marking code is L51.
MAXIMUM RATINGS
(TA=25
o
C)
SYMBOL
VR
VRRM
IF
IFRM
IFSM
IFSM
PD
UNITS
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Forward Surge Current, tp=1
μ
sec.
Forward Surge Current, tp=1 sec.
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
60
60
200
600
4000
1000
350
V
V
mA
mA
mA
mA
mW
TJ,Tstg
Θ
JA
-65 to +150
o
C
o
C/W
357
ELECTRICAL CHARACTERISTICS
(TA=25
o
C unless otherwise noted)
SYMBOL
IR
IR
IR
VF
VF
VF
CT
trr
Qs
VFR
VFR
TEST CONDITIONS
VR=60V
VR=60V, TA=150
o
C
VR=75V
IF=10mA
IF=200mA
IF=500mA
VR=0, f=1 MHz
IF=IR=400mA, RL=100
, Rec. to 40mA
IF=10mA, VR=5.0V, RL=500
IF=400mA, tr=30ns
IF=400mA, tr=100ns
MIN
MAX
100
100
10
0.75
1.00
1.25
2.5
6.0
50
1.2
1.5
UNITS
nA
μ
A
μ
A
V
V
V
pF
ns
pC
V
V
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