參數(shù)資料
型號(hào): BAS33-TR
廠商: VISHAY SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: DIODE 0.2 A, 40 V, SILICON, SIGNAL DIODE, DO-35, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-2, Signal Diode
中文描述: Diodes (General Purpose, Power, Switching) 40 Volt 200mA 2.0 Amp IFSM
文件頁(yè)數(shù): 1/3頁(yè)
文件大?。?/td> 96K
代理商: BAS33-TR
BAS33, BAS34
Vishay Semiconductors
Document Number 85541
Rev. 1.7, 17-Aug-10
www.vishay.com
1
94 9367
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
Small Signal Switching Diodes
Features
Silicon Planar Diodes
Very low reverse current
AEC-Q101 qualified
Compliant to RoHS directive 2002/95/EC
and in accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
definition
Applications
Protection circuits, time delay circuits, peak
follower circuits, logarithmic amplifiers
Mechanical Data
Case:
DO-35
Weight:
approx. 125 mg
Cathode Band Color:
black
Packaging Codes/Options:
TR/10 k per 13" reel (52 mm tape), 50 k/box
TAP/10 k per Ammopack (52 mm tape), 50 k/box
Parts Table
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to ambient air
Part
Type differentiation
Ordering code
Type Marking
Remarks
BAS33
V
RRM
= 40 V
BAS33-TAP or BAS33-TR
BAS33
Ammopack/Tape and Reel
BAS34
V
RRM
= 70 V
BAS34-TAP or BAS34-TR
BAS34
Ammopack/Tape and Reel
Test condition
Part
BAS33
Symbol
V
R
V
R
I
FSM
I
F
Value
30
Unit
V
Reverse voltage
BAS34
60
V
Peak forward surge current
t
p
= 1 μs
2
A
Forward continuous current
200
mA
Test condition
l = 4 mm, T
L
= constant
Symbol
R
thJA
T
j
T
stg
Value
350
Unit
K/W
Junction temperature
175
°C
Storage temperature range
- 65 to + 175
°C
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BAS34 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Small Signal Switching Diodes
BAS34-TAP 功能描述:二極管 - 通用,功率,開(kāi)關(guān) 70 Volt 200mA 2.0 Amp IFSM RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube
BAS34-TR 功能描述:二極管 - 通用,功率,開(kāi)關(guān) 70 Volt 200mA 2.0 Amp IFSM RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube
BAS35 功能描述:整流器 SOT-23 120V 200mA RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
BAS35 T/R 功能描述:二極管 - 通用,功率,開(kāi)關(guān) DIODE SW TAPE-7 RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube