參數(shù)資料
型號(hào): BAS240
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Schottky barrier diode
中文描述: 0.12 A, SILICON, SIGNAL DIODE
文件頁(yè)數(shù): 2/8頁(yè)
文件大?。?/td> 55K
代理商: BAS240
2001 Feb 05
2
Philips Semiconductors
Product specification
Schottky barrier diode
BAS240
FEATURES
Low forward voltage
Guard ring protected
Very small ceramic SMD package
Low diode capacitance.
APPLICATIONS
Ultra high-speed switching
Voltage clamping
Protection circuit
Blocking diodes.
DESCRIPTION
Planar Schottky barrier diode with an integrated guard ring for stress protection.
handbook, 4 columns
MAM214
k
a
cathode mark
top view
side view
bottom view
k
Fig.1 Simplified outline (SOD110) and symbol.
Marking: A1.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
R
I
F
I
FRM
I
FSM
T
stg
T
j
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
junction temperature
65
40
120
120
200
+150
150
V
mA
mA
mA
°
C
°
C
t
p
1 s;
δ ≤
0.5
t
p
< 10 ms
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