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參數(shù)資料
| 型號(hào)： | BAS16D-V-GS08 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Diode Small Signal Switching 100V 0.25A 2-Pin SOD-123 T/R |
| 中文描述： | Diodes (General Purpose, Power, Switching) 75 Volt 0.25 Amp 2.0A IFSM @ 1uS |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 85K |
| 代理商： | BAS16D-V-GS08 |
BAS16D
www.vishay.com
Vishay Semiconductors
Rev. 1.4, 13-May-13
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
1
Document Number: 85723
Small Signal Fast Switching Diode
MECHANICAL DATA
Case:
SOD-123
Weight:
approx. 10.3 mg
Packaging codes/options:
18/10K per 13
"
reel (8 mm tape), 10K/box
08/3K per 7
"
reel (8 mm tape), 15K/box
FEATURES
Silicon epitaxial planar diode
Fast switching diode
AEC-Q101 qualified
Base P/N-E3 - RoHS-compliant, commercial
grade
Base P/N-HE3 - RoHS-compliant, AEC-Q101
qualified
Material categorization: For definitions of compliance
please see
www.vishay.com/doc99912
Note
(1)
Valid provided electrodes are kept at ambient temperature
PARTS TABLE
PART
ORDERING CODE
BAS16D-E3-08 or BAS16D-E3-18
BAS16D-HE3-08 or BAS16D-HE3-18
INTERNAL CONSTRUCTION
TYPE MARKING
REMARKS
BAS16D
Single diode
A6
Tape and reel
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Repetitive peak reverse voltage
Forward current (continuous)
TEST CONDITION
SYMBOL
V
R
V
RRM
I
F
I
FSM
I
FSM
I
FSM
P
tot
VALUE
75
100
250
2
1
0.5
350
UNIT
V
V
mA
A
A
A
mW
Non-repetitive peak forward current
t = 1 μs
t = 1 ms
t = 1 s
Power dissipation
(1)
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
(1)
Maximum junction temperature
Storage temperature range
(1)
Operating temperature range
TEST CONDITION
SYMBOL
R
thJA
T
j
T
stg
T
op
VALUE
375
150
- 65 to + 150
- 55 to + 150
UNIT
K/W
°C
°C
°C
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| BAS16LD | Single high-speed switching diode |
| BAS16LP | SURFACE MOUNT SWITCHING DIODE |
| BAS16LP-7 | SURFACE MOUNT SWITCHING DIODE |
| BAS16T-7-F | SURFACE MOUNT FAST SWITCHING DIODE |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BAS16D-V-GS18 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Small Signal Fast Switching Diode |
| BAS16DXV6T1 | 功能描述:二極管 - 通用，功率，開(kāi)關(guān) 75V 200mA RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| BAS16DXV6T1/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Dual Switching Diode |
| BAS16DXV6T1_10 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual Switching Diode |
| BAS16DXV6T1G | 功能描述:二極管 - 通用，功率，開(kāi)關(guān) 75V 200mA RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
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