參數(shù)資料
型號(hào): BAS11
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Controlled avalanche rectifiers
中文描述: 0.3 A, 300 V, SILICON, SIGNAL DIODE, DO-35
封裝: HERMETIC SEALED, GLASS PACKAGE-2
文件頁數(shù): 2/7頁
文件大小: 42K
代理商: BAS11
1996 Sep 26
2
Not recommended for new designs
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BAS11; BAS12
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Available in ammo-pack.
DESCRIPTION
Rectifier diodes in cavity free
cylindrical SOD91 glass packages,
incorporating Implotec
(1)
technology.
(1) Implotec is a trademark of Philips.
These packages are hermetically
sealed and fatigue free as coefficients
of expansion of all used parts are
matched.
Fig.1 Simplified outline (SOD91) and symbol.
MAM196
k
a
Marking code BAS11:
S11.
Marking code BAS12:
S12.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
repetitive peak reverse voltage
BAS11
BAS12
working reverse voltage
BAS11
BAS12
continuous reverse voltage
BAS11
BAS12
average forward current
300
400
V
V
V
RWM
300
400
V
V
V
R
300
400
350
V
V
mA
I
F(AV)
averaged over any 20 ms period;
T
tp
= 75
°
C; lead length = 10 mm;
see Figs 2 and 4
averaged over any 20 ms period;
T
amb
= 30
°
C; PCB mounting
(see Fig.8); see Figs 3 and 4
t = 10 ms half sinewave;
T
j
= T
j max
prior to surge;
V
R
= V
RRMmax
t = 10
μ
s square wave; f = 50 Hz;
T
amb
= 25
°
C
300
mA
I
FSM
non-repetitive peak forward current
4
A
P
RRM
repetitive peak reverse power
dissipation
storage temperature
75
W
T
stg
T
j
65
65
+150
°
C
°
C
junction temperature
+150
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