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參數(shù)資料
| 型號： | BAQ800 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | AM PIN diode |
| 中文描述： | SILICON, PIN DIODE |
| 封裝： | HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 93K |
| 代理商： | BAQ800 |
1997 Aug 26
3
Philips Semiconductors
Product specification
AM PIN diode
BAQ800
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified; all characteristics must be tested in the dark because of the light sensitivity
of this product.
THERMAL CHARACTERISTICS
All characteristics must be tested in the dark because of the light sensitivity of this product.
Note
1.
Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥
40
μ
m, see Fig.17.
For more information please refer to the “General Part of Handbook SC01”
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
forward voltage
I
F
= 100 mA; see Figs 4 and 5
I
F
= 100 mA; T
j
= T
j max
;
see Figs 4 and 5
V
R
= 100 V; see Fig.14
V
R
= 100 V; T
j
= 125
°
C; see Fig.14
when switched from I
F
= 10 mA to
I
R
= 6 mA; measured at 10% of I
R
;
see Fig.15
f = 1 MHz; see Figs 6, 7, 8 and 9
V
R
= 0
V
R
= 2 V
f = 100 kHz; see Figs 10 and 16
I
F
= 10
μ
A
I
F
= 100
μ
A
I
F
= 1 mA
I
F
= 10 mA
f = 100 kHz; see Figs 11, 12 and 13
V
R
= 0
V
R
= 2 V
f = 1 MHz; see Figs 11, 12 and 13
V
R
= 0
V
R
= 2 V
0.9
0.7
1.1
0.9
V
V
I
R
reverse current
0.1
30
μ
A
μ
A
μ
s
τ
charge carrier life time
10
20
C
d
diode capacitance
10
12
pF
pF
5
6
r
D
diode forward resistance
3100
380
6000
800
42
80
10
5
r
s
diode series resistance
1000
5000
2200
11000
k
k
25
50
k
k
100
220
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
R
th j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm
note 1
60
K/W
K/W
120
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