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參數資料
| 型號： | BAP65-05W |
| 英文描述： | Silicon PIN diode |
| 中文描述： | 硅PIN二極管 |
| 文件頁數： | 3/7頁 |
| 文件大?。?/td> | 75K |
| 代理商： | BAP65-05W |
2001 Nov 01
3
Philips Semiconductors
Preliminary specification
Silicon PIN diode
BAP65-01
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Note
1.
Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
F
I
R
C
d
forward voltage
reverse leakage current
diode capacitance
I
F
= 50 mA
V
R
= 20 V
V
R
= 0 V; f = 1 MHz
V
R
= 1 V; f = 1 MHz
V
R
= 3 V; f = 1 MHz
V
R
= 20 V; f = 1 MHz
I
F
= 1 mA; f = 100 MHz
I
F
= 5 mA; f = 100 MHz; note 1
I
F
= 10 mA; f = 100 MHz; note 1
I
F
= 100 mA; f = 100 MHz
V
R
= 0; f = 900 MHz
V
R
= 0; f = 1800 MHz
V
R
= 0; f = 2450 MHz
I
F
= 1 mA; f = 900 MHz
I
F
= 1 mA; f = 1800 MHz
I
F
= 1 mA; f = 2450 MHz
I
F
= 5 mA; f = 900 MHz
I
F
= 5 mA; f = 1800 MHz
I
F
= 5 mA; f = 2450 MHz
I
F
= 10 mA; f = 900 MHz
I
F
= 10 mA; f = 1800 MHz
I
F
= 10 mA; f = 2450 MHz
I
F
= 100 mA; f = 900 MHz
I
F
= 100 mA; f = 1800 MHz
I
F
= 100 mA; f = 2450 MHz
when switched from I
F
= 10 mA to
I
R
= 6 mA; R
L
= 100
;
measured at I
R
= 3 mA
I
F
= 100 mA; f = 100 MHz
0.9
0.61
0.48
0.43
0.375
1.0
0.6
0.5
0.3
9.4
5.5
4.1
0.10
0.12
0.15
0.08
0.10
0.12
0.06
0.09
0.11
0.05
0.08
0.10
0.17
1.1
20
0.9
0.8
0.95
0.9
V
nA
pF
pF
pF
pF
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
μ
s
r
D
diode forward resistance
|
s
21
|
2
isolation
|
s
21
|
2
insertion loss
|
s
21
|
2
insertion loss
|
s
21
|
2
insertion loss
|
s
21
|
2
insertion loss
τ
L
charge carrier life time
L
S
series inductance
0.6
nH
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point
190
K/W
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