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參數(shù)資料
| 型號： | BAP55L |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Silicon PIN diode |
| 中文描述： | SILICON, PIN DIODE |
| 封裝： | 1 X 0.60 MM, 0.50 MM HEIGHT, LEADLESS, ULTRA SMALL, PLASTIC, SMD, 2 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 57K |
| 代理商： | BAP55L |
9397 750 14811
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Preliminary data sheet
Rev. 01 — 5 April 2005
2 of 8
Philips Semiconductors
BAP55L
Silicon PIN diode
4.
Marking
5.
Limiting values
6.
Thermal characteristics
7.
Characteristics
Table 3:
Type number
BAP55L
Marking
Marking code
E6
Table 4:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
V
R
reverse voltage
I
F
forward current
P
tot
total power dissipation
T
stg
storage temperature
T
j
junction temperature
Limiting values
Conditions
Min
-
-
-
65
65
Max
50
100
500
+150
+150
Unit
V
mA
mW
°
C
°
C
T
s
= 90
°
C
Table 5:
Symbol
R
th(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction
to soldering point
Conditions
Typ
100
Unit
K/W
Table 6:
T
j
= 25
°
C unless otherwise specified.
Symbol
Parameter
V
F
forward voltage
I
R
reverse current
Characteristics
Conditions
I
F
= 50 mA
V
R
= 20 V
V
R
= 50 V
f = 1 MHz;
Figure 2
V
R
= 0 V
V
R
= 1 V
V
R
= 20 V
f = 100 MHz;
Figure 1
I
F
= 0.5 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
Min
-
-
-
Typ
0.95
-
-
Max
1.1
10
0.1
Unit
V
nA
μ
A
C
d
diode capacitance
-
-
-
0.27
0.23
0.18
-
-
0.28
pF
pF
pF
r
D
diode forward
resistance
-
-
-
-
3.4
2.3
0.8
0.4
4.5
3.3
1.2
0.7
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