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參數(shù)資料
| 型號： | BA980-GS18 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | DIODE SILICON, PIN DIODE, ROHS COMPLIANT, GLASS, QUADROMELF-2, PIN Diode |
| 中文描述： | PIN Diodes 30 Volt 50mA 50nA IR @ 30V |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 87K |
| 代理商： | BA980-GS18 |
BA980
www.vishay.com
Vishay Semiconductors
Rev. 1.5, 21-May-12
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
1
Document Number: 85636
RF PIN Diode - Single in QuadroMELF SOD-80
FEATURES
Wide frequency range 10 MHz to 1 GHz
AEC-Q101 qualified
Material categorization:
For definitions of compliance please see
www.vishay.com/doc99912
APPLICATIONS
Current
attenuators
controlled
HF
resistance
in
adjustable
MECHANICAL DATA
Case:
QuadroMELF SOD-80
Weight:
approx. 34 mg
Cathode band color:
black
Packaging codes/options:
GS18/10K per 13" reel (8 mm tape), 10K/box
GS08/2.5K per 7" reel (8 mm tape), 12.5K/box
PARTS TABLE
PART
ORDERING CODE
TYPE MARKING
INTERNAL
CONSTRUCTION
Single diode
REMARKS
BA980
BA980-GS18 or BA980-GS08
-
Tape and reel (2500 pcs)
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PART
TEST CONDITION
Reverse voltage
Forward continuous current
SYMBOL
V
R
I
F
VALUE
30
50
UNIT
V
mA
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
on PC board
50 mm x 50 mm x 1.6 mm
SYMBOL
VALUE
UNIT
Thermal resistance junction to ambient air
R
thJA
500
K/W
Junction temperature
Storage temperature range
T
j
125
°C
°C
T
stg
- 55 to + 150
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Forward voltage
I
F
= 20 mA
Reverse current
V
R
= 30 V
Diode capacitance
f = 100 MHz, V
R
= 0 V
Differential forward resistance
f = 100 MHz, I
F
= 1.5 mA
Reverse impedance
f = 100 MHz, V
R
= 0 V
Minority carrier lifetime
I
F
= 10 mA, I
R
= 10 mA
PART
SYMBOL
V
F
I
R
C
D
r
f
z
r
MIN.
TYP.
MAX.
1
0.05
0.5
60
UNIT
V
μA
pF
k
μs
40
5
BA980
4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BA980-GS08 | DIODE SILICON, PIN DIODE, ROHS COMPLIANT, GLASS, QUADROMELF-2, PIN Diode |
| BA980 | RF PIN Diode |
| BA980-GS08 | RF PIN Diode |
| BA983 | Silicon Planar Diodes |
| BAL99-7-F | SURFACE MOUNT SWITCHING DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BA982 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Silicon Planar Diodes |
| BA982.BA983 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Silicon Planar Diodes |
| BA982_10 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Band Switching Diodes |
| BA982-GS08 | 功能描述:二極管 - 通用，功率，開關(guān) 35 Volt 100mA Band RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| BA982-GS18 | 功能描述:二極管 - 通用，功率，開關(guān) 35 Volt 100mA Band RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
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