參數(shù)資料
型號(hào): BA682
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Band-switching diodes
中文描述: SILICON, VHF BAND, MIXER DIODE
封裝: GLASS, SMD, 2 PIN
文件頁數(shù): 2/5頁
文件大小: 31K
代理商: BA682
1996 Mar 13
2
Philips Semiconductors
Product specification
Band-switching diodes
BA682; BA683
FEATURES
Continuous reverse voltage:
max. 35 V
Continuous forward current:
max. 100 mA
Low diode capacitance:
max. 1.5 pF
Low diode forward resistance:
max. 0.7 to 1.2
.
APPLICATION
Band-switching in VHF television
tuners.
DESCRIPTION
Planar high performance band-switching diodes in a glass SOD80
SMD package.
Fig.1 Simplified outline (SOD80) and symbol.
handbook, 4 columns
MAM061
k
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
MIN.
65
MAX.
UNIT
V
R
I
F
T
stg
T
j
continuous reverse voltage
continuous forward current
storage temperature
junction temperature
35
V
mA
°
C
°
C
100
+150
150
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
V
F
I
R
forward voltage
reverse current
I
F
= 100 mA; see Fig.2
see Fig.3
V
R
= 20V
V
R
= 20 V; T
j
= 75
°
C
f = 1 MHz; V
R
= 1 V; see Fig.4
f = 1 MHz; V
R
= 3 V; see Fig.4
1.0
V
50
nA
μ
A
pF
1
1.5
C
d
C
d
diode capacitance
diode capacitance
BA682
BA683
diode forward resistance
BA682
BA683
diode forward resistance
BA682
BA683
1.25
1.20
pF
pF
r
D
I
F
= 3 mA; f = 200 MHz; see Fig.5
0.7
1.2
r
D
I
F
= 10 mA; f = 200 MHz; see Fig.5
0.5
0.9
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