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參數(shù)資料
| 型號(hào)： | BA592 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Band-switching diode |
| 中文描述： | SILICON, VHF BAND, MIXER DIODE |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大小： | 64K |
| 代理商： | BA592 |
1998 May 07
3
Philips Semiconductors
Preliminary specification
Band-switching diode
BA592
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Note
1.
Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
0.6
TYP.
0.92
0.85
0.45
0.36
100
2
MAX.
UNIT
V
F
I
R
C
d
forward voltage
reverse current
diode capacitance
I
F
= 10 mA
V
R
= 20 V
V
R
= 1 V; f = 1 MHz; note 1
V
R
= 3 V; f = 1 MHz; note 1
I
F
= 3 mA; f = 100 MHz; note 1
I
F
= 10 mA; f = 100 MHz; note 1
V
R
= 1 V; f = 100 MHz; note 1
1
20
1.4
1.1
0.7
0.5
V
nA
pF
pF
k
nH
r
D
diode forward resistance
1/g
p
L
S
reverse resistance
series inductance
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point
120
K/W
GRAPHICAL DATA
Fig.2
Forward resistance as a function of
forward current; typical values.
f = 100 MHz; T
j
= 25
°
C.
0.1
1
10
0.1
1
10
100
I
F
(mA)
r
D
(
)
Fig.3
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
j
= 25
°
C.
0
0.4
0.8
1.2
1.6
2
0
10
20
30
V
R
(V)
C
d
(pF)
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