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參數(shù)資料
| 型號： | BA278 |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 二極管&整流器 |
| 英文描述： | Band-switching diode |
| 封裝： | BA278<SOD523 (SOD523)|<<http://www.nxp.com/packages/SOD523.html<1<week 51, 2002,; |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 82K |
| 代理商： | BA278 |
2001 Jan 15
2
Philips Semiconductors
Preliminary specification
Band-switching diode
BA278
FEATURES
Small plastic SMD package
Continuous reverse voltage: max. 35 V
Continuous forward current: max. 100 mA
Low diode capacitance: max. 1.2 pF
Low diode forward resistance: max. 0.7
.
APPLICATIONS
Low loss band switching in VHF television tuners.
Surface mount band-switching circuits.
DESCRIPTION
Planar high performance band-switching diode in a small
plastic SOD523V SMD package.
PINNING
PIN
DESCRIPTION
1
2
cathode
anode
Fig.1
Simplified outline (SOD523V)
and symbol.
Marking code:
handbook, halfpage
1
2
MAM399
2
Top view
MBK258
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
65
65
MAX.
UNIT
V
R
I
F
P
tot
T
stg
T
j
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
junction temperature
35
V
mA
mW
°
C
°
C
100
715
+150
+150
T
s
= 90
°
C
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Note
1.
Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
V
F
I
R
forward voltage
reverse current
I
F
= 10 mA
V
R
= 25 V
V
R
= 20 V; T
amb
= 75
°
C
f = 1 MHz; V
R
= 6 V; note 1; see Fig.2
I
F
= 2 mA; f = 100 MHz; note 1; see Fig.3
1
V
nA
μ
A
pF
50
1
1.2
0.7
C
d
r
D
diode capacitance
diode forward resistance
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering-point
85
K/W
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| BA278 | Band-switching diode |
| BA282-TAP | DIODE SILICON, VHF BAND, MIXER DIODE, DO-35, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-2, Microwave Mixer Diode |
| BA283-TAP | DIODE SILICON, VHF BAND, MIXER DIODE, DO-35, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-2, Microwave Mixer Diode |
| BA282-TR | DIODE SILICON, VHF BAND, MIXER DIODE, DO-35, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-2, Microwave Mixer Diode |
| BA283-TR | DIODE SILICON, VHF BAND, MIXER DIODE, DO-35, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-2, Microwave Mixer Diode |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BA278,115 | 功能描述:二極管 - 通用，功率，開關 Switching Diodes 1.2pF 715mW RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| BA278115 | 制造商:NXP Semiconductors 功能描述: |
| BA281 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| BA282 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Silicon Planar Diodes |
| BA282_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Band Switching Diodes |
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