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參數(shù)資料
| 型號： | BA221 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | High-speed diode |
| 中文描述： | 0.2 A, 30 V, SILICON, SIGNAL DIODE, DO-35 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 39K |
| 代理商： | BA221 |
1996 Sep 03
4
Philips Semiconductors
Product specification
High-speed diode
BA221
GRAPHICAL DATA
Fig.2
Maximum permissible continuous forward
current as a function of ambient
temperature.
Device mounted on an FR4 printed-circuit board; lead length 10 mm.
handbook, halfpage
0
100
200
200
0
100
MBG451
Tamb (
o
C)
IF
(mA)
Fig.3
Forward current as a function of forward
voltage.
handbook, halfpage
0
1
2
0
200
400
MBG461
VF (V)
IF
(mA)
(1) (2)
(3)
(1) T
j
= 175
°
C; typical values.
(2) T
j
= 25
°
C; typical values.
(3) T
j
= 25
°
C; maximum values.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Based on square wave currents.
T
j
= 25
°
C prior to surge.
handbook, full pagewidth
MBG703
10
tp (
μ
s)
1
IFSM
(A)
2
10
1
10
4
10
2
10
3
10
1
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