• 參數(shù)資料
    型號: BA15DD0WHFP-E2
    元件分類: 固定正電壓單路輸出LDO穩(wěn)壓器
    英文描述: 1.5 V FIXED POSITIVE LDO REGULATOR, 0.7 V DROPOUT, PSSO5
    封裝: LEAD FREE, HRP-5
    文件頁數(shù): 7/9頁
    文件大?。?/td> 1047K
    代理商: BA15DD0WHFP-E2
    7/8
    Other Points of Caution
    1)Protection Circuits
    Over-current Protection Circuit
    A built-in over-current protection circuit corresponding to the current capacity prevents the destruction of the IC when there
    are load shorts. This protection circuit is a “7”-shaped current control circuit that is designed such that the current is restricted
    and does not latch even when a large current momentarily flows through the system with a high-capacitance capacitor.
    However, while this protection circuit is effective for the prevention of destruction due to unexpected accidents, it is not
    suitable for continuous operation or transient use. Please be aware when creating thermal designs that the overcurrent
    protection circuit has negative current capacity characteristics with regard to temperature (Refer to Figs.4 and 16).
    Thermal Shutdown Circuit (Thermal Protection)
    This system has a built-in temperature protection circuit for the purpose of protecting the IC from thermal damage. As shown
    above, this must be used within the range of acceptable loss, but if the acceptable loss happens to be continuously exceeded,
    the chip temperature Tj increases, causing the temperature protection circuit to operate.
    When the thermal shutdown circuit operates, the operation of the circuit is suspended. The circuit resumes operation
    immediately after the chip temperature Tj decreases, so the output repeats the ON and OFF states (Please refer to Figs.12
    and 24 for the temperatures at which the temperature protection circuit operates).
    There are cases in which the IC is destroyed due to thermal runaway when it is left in the overloaded state. Be sure to avoid
    leaving the IC in the overloaded state.
    Reverse Current
    In order to prevent the destruction of the IC when a reverse current flows through the IC, it is recommended that a diode
    be placed between the Vcc and Vo and a pathway be created so that the current can escape (Refer to Fig.35).
    2) This IC is bipolar IC that has a P-board (substrate) and P+ isolation layer
    between each devise, as shown in Fig.36. A P-N junction is formed between
    this P-layer and the N-layer of each device, and the P-N junction operates as a
    parasitic diode when the electric potential relationship is GND> Terminal A,
    GND> Terminal B, while it operates as a parasitic transistor when the electric
    potential relationship is Terminal B GND> Terminal A. Parasitic devices are
    structurally inevitable in the IC. The operation of parasitic devices induces
    mutual interference between circuits, causing malfunctions and eventually the
    destruction of the IC. It is necessary to be careful not to use the IC in ways that
    would cause parasitic elements to operate. For example, applying a voltage
    that is lower than the GND (P-board) to the input terminal.
    Fig. 37: Example of the basic structure of a bipolar IC
    ●Part Number Selection
    GND
    N
    P
    N
    P+
    Parasitic element
    or transistor
    (Pin B)
    B
    E
    Transistor (NPN)
    N
    P
    N
    GND
    O
    (Pin A)
    GND
    N
    P+
    Resistor
    Parasitic element
    P
    N
    P
    P+
    N
    (Pin A)
    Parasitic element
    or transistor
    (Pin B)
    GND
    C
    B
    E
    Parasitic element
    GND
    Fig. 36:Bypass diode
    OUT
    Vcc
    CTL
    GND
    Reverse current
    ROHM
    model name
    Output
    voltage
    Current capacity
    CC0 : 1A
    DD0 : 2A
    Shutdown switch
    W : With switch
    None : Without
    switch
    T :
    F P :
    HFP :
    B
    3 3 D D
    W
    H
    0
    A
    P
    E 2
    F
    Package specification
    TR : Embossed taping(HRP5)
    E2 : Embossed taping(TO252-3,5)
    None : Tube container
    V5 :Foaming(V5 only)
    Package
    TO220-3,5
    TO252-3,5
    HRP5
    (Unit:mm)
    TO252-3
    (Unit:mm)
    TO252-5
    (Unit:mm)
    HRP5
    相關(guān)PDF資料
    PDF描述
    BA15DD0WT-E2 1.5 V FIXED POSITIVE LDO REGULATOR, 0.7 V DROPOUT, SFM5
    BA15DD0WT-TR 1.5 V FIXED POSITIVE LDO REGULATOR, 0.7 V DROPOUT, SFM5
    BA08CC0T-E2 8 V FIXED POSITIVE LDO REGULATOR, 0.5 V DROPOUT, SFM3
    BA08CC0WFP-TR 8 V FIXED POSITIVE LDO REGULATOR, 0.5 V DROPOUT, PSSO5
    BA08CC0WT-TR 8 V FIXED POSITIVE LDO REGULATOR, 0.5 V DROPOUT, SFM5
    相關(guān)代理商/技術(shù)參數(shù)
    參數(shù)描述
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