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參數(shù)資料
| 型號： | B2S |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | (44.08 k) |
| 中文描述： | （44.08十一） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 44K |
| 代理商： | B2S |
B1S – B8S
1 of 2 2000 Won-Top Electronics
B1S – B8S
0.5A MINI SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
Features
!
Glass Passivated Die Construction G
!
Low Forward Voltage Drop
!
High Current Capability
!
High Surge Current Capability
- +
H
!
Designed for Surface Mount Application B
~ ~
D E
!
Plastic Material – UL Recognition Flammability
Classification 94V-O C
M
A L
Mechanical Data
J
!
Case: Molded Plastic
!
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208 K
!
Polarity: As Marked on Case
!
Weight: 0.22 grams (approx.)
!
Mounting Position: Any
!
Marking: Type Number
Maximum Ratings and Electrical Characteristics
@T
A
=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
B1S
B2S
B4S
B6S
B8S
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
100
200
400
600
800
V
RMS Reverse Voltage
V
R(RMS)
70
140
280
420
560
V
Average Rectified Output Current @T
A
= 40°C
I
O
0.5
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
I
FSM
30
A
I
2
t Rating for Fusing (t < 8.35ms)
I
2
t
10
A
2
s
Forward Voltage per element @I
F
= 0.5A
V
FM
1.0
V
Peak Reverse Current @T
A
= 25°C
At Rated DC Blocking Voltage @T
A
= 125°C
I
RM
5.0
500
μA
Typical Junction Capacitance (per leg) (Note 1)
C
j
25
pF
Typical Thermal Resistance (per leg) (Note 2)
R
JA
85
K/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
°C
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Thermal resistance junction to ambient mounted on PC board with 13mm
2
copper pads.
W TE
POWER SEMICONDUCTORS
MB-S
Min
4.50
3.80
0.006
—
—
0.70
1.30
2.30
2.30
—
0.50
Dim
A
B
C
D
E
G
H
J
K
L
M
Max
4.90
4.20
0.35
0.20
7.0
1.10
1.70
2.70
2.70
3.00
0.80
All Dimensions in mm
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