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參數(shù)資料
| 型號(hào)： | AWU6608RM45Q7 |
| 廠商： | ANADIGICS INC |
| 元件分類： | 放大器 |
| 英文描述： | 880 MHz - 915 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER |
| 封裝： | 4 X 4 MM, 1 MM HEIGHT, ROHS COMPLIANT, MINIATURE, M49 PACKAGE-10 |
| 文件頁數(shù)： | 1/13頁 |
| 文件大小： | 543K |
| 代理商： | AWU6608RM45Q7 |
03/2010
AWU6608
HELP3TM Band 8 / WCDMA
3.4 V / 28.5 dBm Linear PA Module
Data Sheet - Rev 2.1
M45 Package
10 Pin 3 mm x 3 mm x 1 mm
Surface Mount Module
Figure 1: Block Diagram
FEATURES
HSPA Compliant
InGaP HBT Technology
HighEfficiency:(R99waveform)
40 % @ POUT = +28.5 dBm
22 % @ POUT = +17 dBm
SimplerCalibrationwithonly2BiasModes
LowQuiescentCurrent:9mA
LowLeakageCurrentinShutdownMode:<1A
Internal Voltage Regulator
Integrated“daisychainable”directionalcouplers
withCPLIN and CPLOUTPorts
Optimized for a 50 System
LowProfileMiniatureSurfaceMountPackage
RoHSCompliantPackage,260oC MSL-3
APPLICATIONS
WCDMA/HSPA900MHzBandWireless
HandsetsandDataDevices
PRODUCT DESCRIPTION
TheAWU6608HELP3TMPAisa3rdgenerationWCDMA
product for UMTS handsets.This PA incorporates
ANADIGICS’ HELP3TM technology to provide low
powerconsumptionwithouttheneedforanexternal
voltage regulator.A “daisy chainable” directional
couplerisintegratedinthemodulethuseliminatingthe
needofexternalcouplers.Thedeviceismanufactured
on an advanced InGaP HBT MMIC technology offering
state-of-the-art reliability, temperature stability, and
ruggedness.There are two selectable bias modes
that optimize efficiency for different output power
levels,andashutdownmodewithlowleakagecurrent,
whichincreaseshandsettalkandstandbytime.The
self-contained3mmx3mmx1mmsurfacemount
packageincorporatesmatchingnetworksoptimizedfor
outputpower,efficiency,andlinearityina50system.
AWU6608
1
2
3
4
5
10
9
8
7
6
VBATT
RFIN
VMODE2 (N/C)
VMODE1
VEN
CPLOUT
GND
CPLIN
RFOUT
VCC
BiasControl
Voltage Regulation
CPL
GNDatSlug(pad)
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