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參數(shù)資料
| 型號： | AWT6310RM23Q7 |
| 廠商： | ANADIGICS INC |
| 元件分類： | 衰減器 |
| 英文描述： | Dual-band CDMA/PCS 3.4 V/28 dBm Linear Power Amplifier Module |
| 中文描述： | 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 3 X 5 MM, 1 MM HEIGHT, ROHS COMPLIANT, M23, 12 PIN |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 168K |
| 代理商： | AWT6310RM23Q7 |
05/2006
AWT6310R
Dual-band CDMA/PCS
3.4 V/28 dBm Linear Power Amplifier Module
PRELIMINARY DATA SHEET - Rev 1.1
M23 Package
12 Pin 3 mm x 5 mm x 1 mm
Surface Mount Module
FEATURES
Single Mode Operation: P
OUT
≤
+28 dBm
High Efficiency: 54 % AMPS, 39 % CDMA
Low Quiescent Current: 50 mA
25 % Package Size Reduction
Common V
MODE
Control Line
Simplified V
CC
Bus PCB routing
Reduced External Component Count
Low Profile Surface Mount Package: 1.1 mm
RoHS Compliant Package, 250
o
C MSL-3
APPLICATIONS
Dual-band Cellular/PCS CDMA Wireless
Handsets
PRODUCT DESCRIPTION
The AWT6310R meets the increasing demands for
higher levels of integration in dual-band CDMA/PCS
1X handsets, while reducing board area
requirements by 25 %. The package pinout was
chosen to enable handset manufacturers to easily
route V
CC
to both power amplifiers and simplify
control with a common V
MODE
pin. The device is
manufactured on an advanced InGaP HBT MMIC
technology offering state-of-the-art reliability,
temperature stability, and ruggedness. Selectable
bias modes that optimize efficiency for different
output power levels, and a shutdown mode with low
leakage current, serve to increase handset talk and
standby time. The self contained 3 mm x 5 mm x 1 mm
surface mount package incorporates matching
networks optimized for output power, efficiency and
linearity in a 50
system.
Figure 1: Block Diagram
Bias Control
V
REF_CELL
V
CC1
RF
IN_CELL
RF
OUT_CELL
V
CC2
V
MODE
1
11
9
12
10
3
4
2
GND
V
CC2
A
5
6
8
7
Bias Control
GND
RF
OUT_PCS
V
REF_PCS
RF
IN_PCS
GND at slug (pad)
GND
AWT6310R
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