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參數(shù)資料
| 型號： | AWT6272R |
| 廠商： | ANADIGICS, Inc. |
| 元件分類： | 基準(zhǔn)電壓源/電流源 |
| 英文描述： | HELP Cellular/WCDMA 3.4 V/29 dBm Linear Power Amplifier Module |
| 中文描述： | 幫助蜂窩/ WCDMA的3.4第V/29 dBm的線性功率放大器模塊 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 225K |
| 代理商： | AWT6272R |
05/2006
AWT6272R
HELP
TM
Cellular/WCDMA 3.4 V/29 dBm
Linear Power Amplifier Module
PRELIMINARY DATA SHEET - Rev 1.5
M20 Package
10 Pin 4 mm x 4 mm x 1.1 mm
Surface Mount Module
Figure 1: Block Diagram
MMIC technology offering state-of-the-art reliability,
temperature stability, and ruggedness. Selectable bias
modes that optimize efficiency for different output power
levels, and a shutdown mode with low leakage current,
increase handset talk and standby time. The self-
contained 4 mm x 4 mm x 1.1 mm surface mount
package incorporates matching networks optimized
for output power, efficiency, and linearity in a 50
system.
FEATURES
InGaP HBT Technology
High Efficiency:
44 % @ P
OUT
= +29 dBm
20 % @ P
OUT
= +16 dBm
15 % @ P
OUT
= +7 dBm
Low Quiescent Current: 16 mA
Low Leakage Current in Shutdown Mode: <1
μ
A
V
REF
= +2.85 V (+2.75 V min over temp)
Optimized for a 50
System
Low Profile Miniature Surface Mount Package
Option: 1.1 mm Max
RoHS Compliant Package, 250
o
C MSL-3
HSDPA Compliant (no backoff)
APPLICATIONS
Dual Band WCDMA Wireless Handsets
Dual Mode 3GPP Wireless Handsets
PRODUCT DESCRIPTION
The AWT6272R meets the increasing demands for
higher output power in UMTS handsets. The PA module
is optimized for V
REF
= +2.85 V, a requirement for
compatibility with the Qualcomm 6250 chipset. The
device is manufactured on an advanced InGaP HBT
Bias Control
V
CC
V
REF
RF
IN
RF
OUT
GND
V
MODE
1
7
5
8
10
6
GND at slug (pad)
3
9
4
2
GND
V
CC
GND
GND
AT22
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相關(guān)代理商/技術(shù)參數(shù) |
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| AWT6272RM20P8 | 制造商:Rochester Electronics LLC 功能描述: 制造商:ANADIGICS Inc 功能描述: |
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| AWT6273RM20P8 | 制造商:ANADIGICS Inc 功能描述:RF & MW POWER AMPLIFIER |
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