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參數(shù)資料
| 型號(hào)： | AWT6252RM7P8 |
| 廠商： | ANADIGICS INC |
| 元件分類： | 放大器 |
| 英文描述： | 1920 MHz - 1980 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 4 X 4 MM, 1.50 MM HEIGHT, ROHS COMPLIANT, MINIATURE, M7, 10 PIN |
| 文件頁(yè)數(shù)： | 1/13頁(yè) |
| 文件大小： | 312K |
| 代理商： | AWT6252RM7P8 |
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06/2005
AWT6252
IMT/WCDMA 3.4V/27.5dBm
Linear Power Amplifier Module
PRELIMINARY DATA SHEET - Rev 1.6
M7 Package
10 Pin 4 mm x 4 mm x 1.5 mm
Surface Mount Module
Figure 1: Block Diagram
Selectable bias modes that optimize efficiency for
different output power levels, and a shutdown mode
with low leakage current, increase handset talk and
standby time. The self-contained 4 mm x 4 mm x 1.5 mm
surface mount package incorporates matching
networks optimized for output power, efficiency, and
linearity in a 50
system.
FEATURES
InGaP HBT Technology
High Efficiency:
41% - Low Bias Mode
39% - High Bias Mode
Low Quiescent Current: 50 mA
Low Leakage Current in Shutdown Mode: <1
A
VREF = +2.85 V (+2.75 V min over temp)
Optimized for a 50
System
Low Profile Miniature Surface Mount Package:
1.56mm Max
RoHS Compliant Package Option, 250 oC MSL-3
APPLICATIONS
Dual Mode 3GPP Wireless Handsets
PRODUCT DESCRIPTION
The AWT6252 meets the increasing demands for
higher output power in 3GPP 1XRTT handsets. The PA
module is optimized for VREF = +2.85 V, a requirement
for compatibility with the Qualcomm 6250 chipset.
The device is manufactured on an advanced InGaP
HBT MMIC technology offering state-of-the-art
reliability, temperature stability, and ruggedness.
AWT6252
Bias Control
VCC
VREF
RFIN
RFOUT
GND
VMODE
1
7
5
8
10
6
GND at slug (pad)
3
9
4
2
GND
VCC
GND
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