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參數(shù)資料
| 型號： | AWT6168 |
| 廠商： | ANADIGICS INC |
| 元件分類： | 無繩電話/電話 |
| 英文描述： | GSM/GPRS/Polar EDGE Power Amplifier Module with Integrated Power Control |
| 中文描述： | TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, QCC18 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 232K |
| 代理商： | AWT6168 |
01/2005
Figure 1: Block Diagram
FEATURES
Internal Reference Voltage
Integrated Power Control Scheme
InGaP HBT Technology
ESD Protection on All Pins (2.5 kV)
Low profile 1.3 mm
Small Package Outline 7 mm x 7 mm
EGPRS Capable (class 12)
GMSK MODE
Integrated power control (CMOS)
+35 dBm GSM850/900 Output Power
+33 dBm DCS/PCS Output Power
55 % GSM850/900 PAE
50 % DCS/PCS PAE
Power control range > 50 dB
EDGE MODE
+30.5 dBm GSM850/900 Output Power
+29.5 dBm DCS/PCS Output Power
25 % GSM850/900 PAE
25 % DCS/PCS PAE
APPLICATIONS
GSM850/GSM900/DCS/PCS Handsets
Dual/Tri/Quad Band PDA
GMSK and 8-PSK Polar Modulation
Schemes
PRODUCT DESCRIPTION
This power amplifier module supports dual, tri and
quad band applications for GMSK and 8-PSK modu-
lation schemes using a polar architecture. There are
two amplifier chains, one to support GSM850/900
bands, the other for DCS/PCS bands.
The module includes an internal reference voltage
and integrated power control scheme for use in both
GMSK and 8-PSK operation. This facilitates fast and
easy production calibration and reduces the num-
ber of external components required to complete a
power control function. The amplifier’s power con-
trol range is typically 55 dB, with the output power set
by applying an analog voltage to V
RAMP
.
All of the RF ports for this device are internally
matched to 50
. Internal DC blocks are provided at
the RF inputs.
AWT6168
GSM/GPRS/Polar EDGE Power Amplifier
Module with Integrated Power Control
ADVANCED PRODUCT INFORMATION - REV 0.1
GSM850/900_IN
T
X
_EN
DCS/PCS_IN
GSM850/900_OUT
GSM850/900
Bias/Power
Control
DCS/PCS_OUT
DCS/PCS
BS
V
RAMP
V
BATT
C
EXT
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