
6
ADVANCED PRODUCT INFORMATION - Rev 0.1
12/2002
AWS5524
Die Applications
Bonding and circuit connections for the unpackaged
AWS5524 die are shown in Figure 8, and application
details are listed in the following notes:
1. Cb are DC blocking capacitors external to the
device. A value of 100 pF is sufficient for operation
to 500 MHz. The values may be tailored to provide
specific electrical responses. The isolation of the
switch provides enough decoupling of RF ports 1
through 4 so that overall switch performance is not
affected.
2. The VS pin provides a fixed voltage potential to
the common port of the switch. To get the best linear
performance, it should be tied to the logic high
voltage potential (not the power supply). Current
draw on this pin is less than 5
μ
A.
3. The RF Ground bondwires should be kept as
short as possible and bonded directly to a good RF
ground for best broadband performance.
4. L
ESD
provides a means to increase the ESD
protection on a specific RF port, typically the port
attached to the antenna. The ESD rating of the device
is ±125 V HBM overall. This rating is associated
with the control pin to RF port path. RF port to RF
port/RF Gnd has been determined to be >±500 V
HBM for this technology. By using L
ESD
as an RF
choke on a port, an ESD protection to ±8 kV contact
discharge can be achieved.
5. The die may be attached by either conductive or
non-conductive epoxy formulated for attaching
semiconductor parts. The back of the die is
electrically isolated from the switch circuit and can
be grounded or left isolated.
Figure 8: Application Schematic
Control Pin, RF Path 2
RF Gnd, Path 1 Shunt
RF Port 4
Common
Port Supply
Note 2 (Logic high)
C
b
Control Pin, RF Path 1
RFC
RF3G
RF4
VS
V1
RF2G
RF2
RF3
V3
V4
RF4G
V2
RF1
RF1G
Control Pin, RF Path 4
Control Pin, RF Path 3
RF Gnd, Path 2 Shunt
Keep RF Gnd Bondwires Short
4 Places, Note 3
RF Port 1
C
b
C
b
RF Port 2
RF Port 3
RF Gnd, Path 3 Shunt
RF Gnd, Path 4 Shunt
Common (Ant.) RF Port
L
ESD
Note 4
C
b
C
b
APPLICATION INFORMATION