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參數(shù)資料
| 型號： | AWL9925RD1Q4 |
| 廠商： | ANADIGICS INC |
| 元件分類： | 放大器 |
| 英文描述： | 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 1.90 X 1.67 MM, ROHS COMPLIANT, D1, 19 PIN |
| 文件頁數(shù)： | 12/20頁 |
| 文件大小： | 574K |
| 代理商： | AWL9925RD1Q4 |
2
Data Sheet - Rev 2.1
12/2007
AWL9925 Die
Table 1: Bond Pad Description
Bond
Pad
NAME
DESCRIPTION
1
PAON 2G
2 GHz On/Off Control. The recommended use is for On/Off control of the PA.
Nominally, 0 V applied will turn amplifier completely off; +3.3 V should be used to
set amplifier to maximum output capability.
2
2G Speed-Up
Cap
2 GHz speed-up cap. An off-die cap is required to accelerate turn-on ramp time to
improve EVM in dynamic burst conditions.
3
2G Speed-Up
Cap
2 GHz speed-up cap. An off-die cap is required to accelerate turn-on ramp time to
improve EVM in dynamic burst conditions.
4
RFIN 2G
2 GHz RF Input. ESD protection circuits on this pin provide a DC path to ground.
Avoid applying DC voltage to this pin. RF is internally matched to 50 and AC
coupled to the input stage. Route RF trace as coplanar waveguide as much as
possible.
5
RFIN 5G
5 GHz RF Output. A shunt inductive matching element included inside the PA
provides a DC path to ground at this pin. Avoid applying DC voltage to this pin.
RF is internally matched to 50 and AC coupled to the input stage. Route RF
trace as coplanar waveguide as much as possible.
6
5G Speed-Up
Cap
5 GHz speed-up cap. An off-die cap is required to accelerate turn-on ramp time to
improve EVM in dynamic burst conditions.
7
5G Speed-Up
Cap
5 GHz speed-up cap. An off-die cap is required to accelerate turn-on ramp time to
improve EVM in dynamic burst conditions.
8
PAON 5G
5 GHz On/Off Control. Power amplifier power control pin. The recommended use
is for on/off control of the PA. Nominally, 0 V applied will turn amplifier completely
off; +3.3 V should be used to set amplifier to maximum output capability.
9
VCC1 5G
5 GHz supply voltage. Bias for 5 GHz On/Off control circuit.
10
VCC2 5G
5 GHz supply voltage. Bias for 5 GHz bias control circuit.
11
VCC3 5G
5 GHz supply voltage. Bias for 1st and 2nd stage power transistors of the 5 GHz PA.
12
VCC4 5G
5 GHz supply voltage. Bias for 3rd stage power transistors of the 5 GHz PA.
13
DETOUT 5G
5 GHz Power Detector Output. DC coupled power detector output. An emitter
follower BJT supplies the output for this pin.
14
RFOUT 5G
5 GHz RF Output. AC coupled output stage internally matched to 50 . Route RF
trace as coplanar waveguide. Although the output stage is AC coupled, a shunt
inductive matching element included inside the PA provided a DC path to ground
at the pin.
15
RFOUT 2G
2 GHz RF Output. ESD protection circuits on this pin provide a DC path to ground.
Avoid applying DC voltage to this pin. RF is internally matched to 50 and AC
coupled to the output stage. Route RF traces as coplanar waveguide.
16
DETOUT 2G
2 GHz Power Detector Output. DC coupled power detector output. An emitter
follower BJT supplies the output for this pin.
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