參數(shù)資料
型號： AWAT6130M7P8
廠商： ANADIGICS INC
元件分類： 放大器
英文描述： 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
封裝： 4 X 4 MM, 1.50 MM HEIGHT, M7, 10 PIN
文件頁數(shù)： 1/12頁
文件大?。?/td> 273K
代理商： AWAT6130M7P8
07/2005
AWT6130
Cellular Dual Mode AMPS/CDMA 3.5V
29dBm Power Amplifier Module
PRELIMINARY DATA SHEET - Rev 1.1
M7 Package
10 Pin 4 mm x 4 mm x 1.5 mm
Surface Mount Module
FEATURES
InGaP HBT Technology
High Efficiency: 48% AMPS, 37% CDMA
Low Quiescent Current: 50 mA
Low Leakage Current in Shutdown Mode: <1
A
Optimized for a 50
System
Low Profile Miniature Surface Mount Package
CDMA 1XRTT Compliant
CDMA 1xEV-DO Compliant
RoHS Compliant Package Option, 250 oC MSL-3
APPLICATIONS
Single Mode CDMA Wireless Handsets
Dual Mode AMPS/CDMA Wireless Handsets
Tri Mode CDMA Handsets with GPS
Figure 1: Block Diagram
Bias Control
VCC
VREF
RFIN
RFOUT
GND
VMODE
1
7
5
8
10
6
GND at slug (pad)
3
9
4
2
GND
VCC
GND
bias modes that optimize efficiency for different output
power levels, and a shutdown mode with low leakage
current, increase handset talk and standby time. The
self-contained 4 mm x 4 mm x 1.5 mm surface mount
package incorporates matching networks optimized
for output power, efficiency, and linearity in a 50
system.
PRODUCT DESCRIPTION
The AWT6130 provides the additional output power
margin RF designers need to overcome additional
post-PA insertion loss in tri-mode handset designs
supporting E911 (GPS enabled). The device is
manufactured on an advanced InGaP HBT MMIC
technology offering state-of-the-art reliability,
temperature stability, and ruggedness. Selectable
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