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參數(shù)資料
| 型號： | AVD0.5P |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN Silicon RF Power Transistor(Ic: 300 mA,Vce: 20 V)(NPN 硅型射頻功率晶體管(Ic: 300 mA,Vce: 20 V)) |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 15K |
| 代理商： | AVD0.5P |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CBO
I
C
= 1 mA
BV
CEO
I
C
= 5 mA
BV
EBO
I
E
= 1 mA
I
CES
V
CE
= 28 V
h
FE
V
CE
= 5.0 V I
C
= 100 mA
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
50
20
3.5
15
UNITS
V
V
V
mA
---
1.0
120
P
G
V
CC
= 12.5 V P
OUT
= 0.5 W f = 1025 - 1150 MHz
10
dB
NPN SILICON RF POWER TRANSISTOR
AVD0.5P
DESCRIPTION:
The
ASI AVD0.5P
is Designed for
FEATURES:
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
300 mA
V
CE
20 V
P
DISS
--- W
T
J
-65
O
C to +200
O
C
T
STG
-65
O
C to +150
O
C
θ
JC
35.0
O
C/W
PACKAGE STYLE .280 4L PILL
ORDER CODE: ASI10551
MINIMUM
inches / mm
.004 / 0.10
.275 / 6.99
.050 / 1.27
B
C
D
E
F
A
MAXIMUM
inches / mm
.285 / 7.24
.060 . 1.52
.130 / 3.30
.006 / 0.15
1.055 / 26.80
DIM
.220 / 5.59
.230 / 5.84
.118 / 3.00
D
E
F
B
C
A
S
S
D
G
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