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參數(shù)資料
| 型號： | AUIRLS4030 |
| 元件分類： | JFETs |
| 英文描述： | 180 A, 100 V, 0.0043 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | ROHS COMPLIANT, PLASTIC, D2PAK-3 |
| 文件頁數(shù)： | 7/12頁 |
| 文件大小： | 286K |
| 代理商： | AUIRLS4030 |
AUIRLS/SL4030
4
www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 10. Drain-to-Source Breakdown Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 11. Typical COSS Stored Energy
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
0.0
0.5
1.0
1.5
2.0
2.5
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
I S
D
,R
ev
er
se
D
ra
in
C
ur
re
nt
(A
)
TJ = 25°C
TJ = 175°C
VGS = 0V
25
50
75
100
125
150
175
TC , Case Temperature (°C)
0
20
40
60
80
100
120
140
160
180
200
I D
,
D
ra
in
C
ur
re
nt
(A
)
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
90
95
100
105
110
115
120
125
V
(B
R
)D
S
,D
ra
in
-t
o-
S
ou
rc
e
B
re
ak
do
w
n
V
ol
ta
ge
(V
)
Id = 5mA
-20
0
20
40
60
80
100
120
VDS, Drain-to-Source Voltage (V)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
E
ne
rg
y
(μ
J)
0
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
10000
I D
,
D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(A
)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
Tc = 25°C
Tj = 175°C
Single Pulse
100μsec
1msec
10msec
DC
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
0
200
400
600
800
1000
1200
1400
E
A
S
,S
in
gl
e
P
ul
se
A
va
la
nc
he
E
ne
rg
y
(m
J)
ID
TOP
17A
40A
BOTTOM 110A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AUIRLS4030TRL | 180 A, 100 V, 0.0043 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRLSL4030 | 180 A, 100 V, 0.0043 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| AUIRLS4030TRR | 180 A, 100 V, 0.0043 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AWSCR-FREQ-MGS-C15-T | CERAMIC RESONATOR, 2 MHz - 8 MHz |
| AWSCR-FREQ-MGD-C15 | CERAMIC RESONATOR, 2 MHz - 8 MHz |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AUIRLS4030-7P | 功能描述:MOSFET 100V 190A 3.9 mOhm Auto Lgc Lvl MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRLS4030-7TRL | 功能描述:MOSFET 100V 190A 3.9 mOhm Auto Lgc Lvl MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRLS4030-7TRR | 功能描述:MOSFET 100V 190A 3.9 mOhm Auto Lgc Lvl MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRLS4030TRL | 功能描述:MOSFET 100V 180A 4.3 mOhm Auto Lgc Lvl MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRLS4030TRR | 功能描述:MOSFET 100V 180A 4.3 mOhm Auto Lgc Lvl MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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