參數(shù)資料
型號(hào)： AUIRLS3034
元件分類： JFETs
英文描述： 195 A, 40 V, 0.0017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： ROHS COMPLIANT, PLASTIC, D2PAK-3
文件頁數(shù)： 5/12頁
文件大小： 249K
代理商： AUIRLS3034
AUIRLS3034
2
www.irf.com
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer
to applocation note # AN-994.
Rθ is measured at TJ approximately 90°C.
RθJC value shown is at time zero.
Notes:
Calcuted continuous current based on maximum allowable junction
temperature Bond wire current limit is 195A. Note that current
limitation arising from heating of the device leds may occur with
some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.013mH
RG = 25Ω, IAS = 195A, VGS =10V. Part not recommended for use
above this value .
ISD ≤ 195A, di/dt ≤ 841A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
S
D
G
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
40
–––
V
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
–––
0.04
––– V/°C
–––
1.4
1.7
–––
1.6
2.0
VGS(th)
Gate Threshold Voltage
1.0
–––
2.5
V
gfs
Forward Transconductance
286
–––
S
RG(int)
Internal Gate Resistance
–––
2.1
–––
Ω
IDSS
Drain-to-Source Leakage Current
–––
20
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
100
Gate-to-Source Reverse Leakage
–––
-100
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Qg
Total Gate Charge
–––
108
162
Qgs
Gate-to-Source Charge
–––
29
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
54
–––
Qsync
Total Gate Charge Sync. (Qg - Qgd)
–––
54
–––
td(on)
Turn-On Delay Time
–––
65
–––
tr
Rise Time
–––
827
–––
td(off)
Turn-Off Delay Time
–––
97
–––
tf
Fall Time
–––
355
–––
Ciss
Input Capacitance
––– 10315 –––
Coss
Output Capacitance
–––
1980
–––
Crss
Reverse Transfer Capacitance
–––
935
–––
Coss eff. (ER) Effective Output Capacitance (Energy Related)i––– 2378 –––
Coss eff. (TR) Effective Output Capacitance (Time Related) h
–––
2986
–––
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
(Body Diode)
ISM
Pulsed Source Current
–––
(Body Diode)
d
VSD
Diode Forward Voltage
–––
1.3
V
trr
Reverse Recovery Time
–––
39
–––
TJ = 25°C
VR = 34V,
–––
41
–––
TJ = 125°C
IF = 195A
Qrr
Reverse Recovery Charge
–––
39
–––
TJ = 25°C
di/dt = 100A/μs
g
–––
46
–––
TJ = 125°C
IRRM
Reverse Recovery Current
–––
1.7
–––
A
TJ = 25°C
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
VDS = 10V, ID = 195A
VGS = 4.5V, ID = 172A g
m
Ω
ID = 195A
RG = 2.1Ω
VGS = 4.5V g
VDD = 26V
ID = 185A, VDS =0V, VGS = 4.5V
Conditions
ID = 185A
RDS(on)
Static Drain-to-Source On-Resistance
pF
A
343
1372
nC
μA
nA
nC
ns
VDS = VGS, ID = 250μA
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
ns
VGS = 0V, VDS = 0V to 32V h
MOSFET symbol
TJ = 25°C, IS = 195A, VGS = 0V g
integral reverse
p-n junction diode.
VGS = 20V
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 5mAd
VGS = 10V, ID = 195A g
VGS = -20V
showing the
VDS = 20V
Conditions
VGS = 4.5V g
VGS = 0V
VDS = 25V
= 1.0MHz
VGS = 0V, VDS = 0V to 32V i
相關(guān)PDF資料
PDF描述
AUIRLS3036-7P 240 A, 60 V, 0.0019 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263CB
AUIRLS3036-7TRL 240 A, 60 V, 0.0019 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263CB
AUIRLS3036-7TRR 240 A, 60 V, 0.0019 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263CB
AUIRLS3036TRL 195 A, 60 V, 0.0024 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AUIRLS3036 195 A, 60 V, 0.0024 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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