參數(shù)資料
型號(hào)： AUIRLS3034-7TRR
元件分類： JFETs
英文描述： 240 A, 40 V, 0.0014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263CB
封裝： ROHS COMPLIANT, PLASTIC, D2PAK-7
文件頁(yè)數(shù)： 4/11頁(yè)
文件大?。?/td> 252K
代理商： AUIRLS3034-7TRR
AUIRLS3034-7P
2
www.irf.com
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 240A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
(Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.010mH
RG = 25Ω, IAS = 220A, VGS =10V. Part not recommended for use
above this value .
S
D
G
ISD ≤ 220A, di/dt ≤ 1240A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C.
RθJC value shown is at time zero.
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
40
–––
V
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
––– 0.035 –––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
1.0
1.4
m
Ω
1.2
1.7
VGS(th)
Gate Threshold Voltage
1.0
–––
2.5
V
gfs
Forward Transconductance
370
–––
S
RG
Internal Gate Resistance
–––
1.9
–––
Ω
IDSS
Drain-to-Source Leakage Current
–––
20
μA
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
100
nA
Gate-to-Source Reverse Leakage
–––
-100
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Qg
Total Gate Charge
–––
120
180
nC
Qgs
Gate-to-Source Charge
–––
32
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
71
–––
Qsync
Total Gate Charge Sync. (Qg - Qgd)
–––
49
–––
td(on)
Turn-On Delay Time
–––
71
–––
ns
tr
Rise Time
–––
590
–––
td(off)
Turn-Off Delay Time
–––
94
–––
tf
Fall Time
–––
200
–––
Ciss
Input Capacitance
––– 10990 –––
pF
Coss
Output Capacitance
–––
2030
–––
Crss
Reverse Transfer Capacitance
–––
1100
–––
Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 2520 –––
Coss eff. (TR) Effective Output Capacitance (Time Related)
–––
3060
–––
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
––– 380
A
(Body Diode)
ISM
Pulsed Source Current
–––
1540
A
(Body Diode)d
VSD
Diode Forward Voltage
–––
1.3
V
trr
Reverse Recovery Time
–––
46
–––
ns
TJ = 25°C
VR = 34V,
–––
49
–––
TJ = 125°C
IF = 220A
Qrr
Reverse Recovery Charge
–––
100
–––
nC TJ = 25°C
di/dt = 100A/μs g
–––
110
–––
TJ = 125°C
IRRM
Reverse Recovery Current
–––
3.7
–––
A
TJ = 25°C
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
VGS = 4.5V, ID = 180A g
Conditions
ID = 170A
VGS = 20V
VGS = -20V
VDS = 10V, ID = 220A
MOSFET symbol
showing the
VDS =20V
Conditions
VGS = 4.5V g
VGS = 0V
VDS = 40V
= 1.0MHz, See Fig. 5
VGS = 0V, VDS = 0V to 32V i, See Fig. 11
VGS = 0V, VDS = 0V to 32V h
TJ = 25°C, IS = 200A, VGS = 0V g
integral reverse
p-n junction diode.
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 5mAd
VGS = 10V, ID = 200A g
VDS = VGS, ID = 250μA
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
ID = 220A
RG = 2.7Ω
VGS = 4.5V g
VDD = 26V
ID = 170A, VDS =0V, VGS = 4.5V
相關(guān)PDF資料
PDF描述
AUIRLS3034TRR 195 A, 40 V, 0.0017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AUIRLS3034TRL 195 A, 40 V, 0.0017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AUIRLS3034 195 A, 40 V, 0.0017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AUIRLS3036-7P 240 A, 60 V, 0.0019 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263CB
AUIRLS3036-7TRL 240 A, 60 V, 0.0019 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263CB
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