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參數(shù)資料
| 型號： | AUIRLR3410 |
| 元件分類： | JFETs |
| 英文描述： | 17 A, 100 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | ROHS COMPLIANT, PLASTIC, DPAK-3 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 246K |
| 代理商： | AUIRLR3410 |
AUIRLR3410
2
www.irf.com
S
D
G
S
D
G
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig.11 )
VDD = 25V, starting TJ = 25°C, L = 3.1mH
RG = 25
, IAS = 9.0A. (See Figure 12)
ISD ≤ 9.0A, di/dt ≤ 540A/s, VDD ≤ V(BR)DSS, TJ ≤ 175°C
Pulse width ≤ 300s; duty cycle ≤ 2%.
Uses IRL530N data and test conditions.
This is applied for LS of D-PAK is measured between
lead and center of die contact
When mounted on 1" square PCB (FR-4 or G-10
Material ). For recommended footprint and soldering
techniques refer to application note #AN-994.
Rθ is measured at Tj approximately 90°C.
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
100
–––
V
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
0.122
–––
V/°C
–––
0.105
RDS(on)
Static Drain-to-Source On-Resistance
–––
0.125
–––
0.155
VGS(th)
Gate Threshold Voltage
1.0
–––
2.0
V
gfs
Forward Transconductance
7.7
–––
S
IDSS
Drain-to-Source Leakage Current
–––
25
A
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
100
nA
Gate-to-Source Reverse Leakage
–––
-100
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Qg
Total Gate Charge
–––
34
Qgs
Gate-to-Source Charge
–––
4.8
nC
Qgd
Gate-to-Drain ("Miller") Charge
–––
20
td(on)
Turn-On Delay Time
–––
7.2
–––
tr
Rise Time
–––53–––
td(off)
Turn-Off Delay Time
–––30–––
ns
tf
Fall Time
–––26–––
LD
Internal Drain Inductance
–––
4.5
–––
Between lead,
nH
6mm (0.25in.)
LS
Internal Source Inductance
–––
7.5
–––
from package
and center of die contact
Ciss
Input Capacitance
–––
800
–––
Coss
Output Capacitance
–––
160
–––
Crss
Reverse Transfer Capacitance
–––
90
–––
pF
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
17
(Body Diode)
A
ISM
Pulsed Source Current
–––
60
(Body Diode)
VSD
Diode Forward Voltage
–––
1.3
V
trr
Reverse Recovery Time
–––
140
210
ns
Qrr
Reverse Recovery Charge
–––
740
1100
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
VGS = 5.0V, ID = 10A
f
VGS = 4.0V, ID = 9.0A
f
VDS = 25V, ID = 9.0A
g
ID = 9.0A
VDS = 80V
Conditions
VGS = 5.0V fg
VGS = 0V
VDS = 25V
= 1.0MHz
g
VGS = 16V
VGS = -16V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 9.0A, VGS = 0V f
TJ = 25°C, IF = 9.0A
di/dt = 100A/s
fg
Conditions
VGS = 0V, ID = 250A
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 10A
f
VDS = VGS, ID = 250A
VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 150°C
Conditions
VGS = 5.0V
fg
VDD = 50V
ID = 9.0A
RG = 6.0
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