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參數(shù)資料
| 型號： | AUIRFU4615 |
| 元件分類： | JFETs |
| 英文描述： | 33 A, 150 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 封裝： | ROHS COMPLIANT, PLASTIC, IPAK-3 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 286K |
| 代理商： | AUIRFU4615 |
08/15/11
www.irf.com
1
HEXFET Power MOSFET
S
D
G
GD
S
Gate
Drain
Source
AUIRFR4615
AUIRFU4615
DPak
AUIRFR4615
IPAK
AUIRFU4615
VDSS
150V
RDS(on) typ.
34m:
max.
42m
:
ID
33A
D
S
G
S
D
G
D
Specifically designed for Automotive applications, this
HEXFET Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use in
Automotiveapplicationsandawidevarietyofotherapplications.
Description
Features
l
Advanced Process Technology
l
Low On-Resistance
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free, RoHS Compliant
l
Automotive Qualified *
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient
temperature (TA) is 25°C, unless otherwise specified.
AUTOMOTIVE GRADE
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
IDM
Pulsed Drain Current
c
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS (Thermally limited)
Single Pulse Avalanche Energy d
mJ
IAR
Avalanche Current c
A
EAR
Repetitive Avalanche Energy c
mJ
dv/dt
Peak Diode Recovery
e
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
j
–––
1.045
RθJA
Junction-to-Ambient (PCB Mount)
i
–––
50
RθJA
Junction-to-Ambient
–––
110
°C/W
°C
A
144
38
-55 to + 175
± 20
0.96
300(1.6mm from case)
109
See Fig. 14, 15, 22a, 22b,
Max.
33
24
140
PD -96398
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AUIRFR4615TRL | 33 A, 150 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR4615TR | 33 A, 150 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR4615TRR | 33 A, 150 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR4615 | 33 A, 150 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFZ44NSTRR | 49 A, 55 V, 0.0175 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
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