參數(shù)資料
型號： AUIRFS3006
元件分類： JFETs
英文描述： 195 A, 60 V, 0.0025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： ROHS COMPLIANT, PLASTIC, D2PAK-3
文件頁數(shù)： 5/12頁
文件大?。?/td> 239K
代理商： AUIRFS3006
AUIRFS3006
2
www.irf.com
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 195A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
(Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.022mH
RG = 25Ω, IAS = 170A, VGS =10V. Part not recommended for use
above this value .
S
D
G
ISD ≤ 170A, di/dt ≤ 1360A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C
RθJC value shown is at time zero
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
60
–––
V
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
–––
0.07
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
2.0
2.5
m
Ω
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
gfs
Forward Transconductance
280
–––
S
RG
Internal Gate Resistance
–––
2.0
–––
Ω
IDSS
Drain-to-Source Leakage Current
–––
20
μA
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
100
nA
Gate-to-Source Reverse Leakage
–––
-100
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Qg
Total Gate Charge
–––
200
300
nC
Qgs
Gate-to-Source Charge
–––
37
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
60
Qsync
Total Gate Charge Sync. (Qg - Qgd)
–––
140
–––
td(on)
Turn-On Delay Time
–––
16
–––
ns
tr
Rise Time
–––
182
–––
td(off)
Turn-Off Delay Time
–––
118
–––
tf
Fall Time
–––
189
–––
Ciss
Input Capacitance
–––
8970
–––
pF
Coss
Output Capacitance
–––
1020
–––
Crss
Reverse Transfer Capacitance
–––
534
–––
Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 1480 –––
Coss eff. (TR) Effective Output Capacitance (Time Related)
–––
1920
–––
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
––– 270
A
(Body Diode)
ISM
Pulsed Source Current
–––
1080
A
(Body Diode)d
VSD
Diode Forward Voltage
–––
1.3
V
trr
Reverse Recovery Time
–––
44
–––
ns
TJ = 25°C
VR = 51V,
–––
48
–––
TJ = 125°C
IF = 170A
Qrr
Reverse Recovery Charge
–––
63
–––
nC TJ = 25°C
di/dt = 100A/μs g
–––
77
–––
TJ = 125°C
IRRM
Reverse Recovery Current
–––
2.4
–––
A
TJ = 25°C
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
VDS = 25V, ID = 170A
Conditions
ID = 170A
VGS = 20V
VGS = -20V
MOSFET symbol
showing the
VDS =30V
Conditions
VGS = 10V g
VGS = 0V
VDS = 50V
= 1.0MHz, See Fig. 5
VGS = 0V, VDS = 0V to 48V i, See Fig. 11
VGS = 0V, VDS = 0V to 48V h
TJ = 25°C, IS = 170A, VGS = 0V g
integral reverse
p-n junction diode.
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 5mAd
VGS = 10V, ID = 170A g
VDS = VGS, ID = 250μA
VDS = 60V, VGS = 0V
VDS = 48V, VGS = 0V, TJ = 125°C
ID = 170A
RG = 2.7Ω
VGS = 10V g
VDD = 39V
ID = 170A, VDS =0V, VGS = 10V
相關(guān)PDF資料
PDF描述
AUIRFS3107-7TRR 240 A, 75 V, 0.0026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263CB
AUIRFS3107-7TRL 240 A, 75 V, 0.0026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263CB
AUIRFS3107-7P 240 A, 75 V, 0.0026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263CB
AUIRFS3107TRR 195 A, 75 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AUIRFS3107TRL 195 A, 75 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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AUIRFS3006-7TRL 功能描述:MOSFET 60V 293A 2.1 mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRFS3006-7TRR 功能描述:MOSFET 60V 293A 2.1 mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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AUIRFS3006TRR 功能描述:MOSFET 60V 270A 2.5 mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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