參數(shù)資料
型號(hào)： AUIRFS3004TRL
元件分類： JFETs
英文描述： 195 A, 40 V, 0.00175 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： ROHS COMPLIANT, PLASTIC, D2PAK-3
文件頁(yè)數(shù)： 5/12頁(yè)
文件大?。?/td> 287K
代理商： AUIRFS3004TRL
AUIRFS/SL3004
2
www.irf.com
Notes:
Calculated continuous current based on maximum allowable
junction temperature. Bond wire current limit is 195A. Note that
current limitations arising from heating of the device leads may
occur with some lead mounting arrangements.
(Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.016mH,RG = 25Ω,
IAS = 195A, VGS =10V. Part not recommended for use above
this value .
S
D
G
ISD ≤ 195A, di/dt ≤ 930A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to
application note #AN-994.
Rθ is measured at TJ approximately 90°C.
RθJC value shown is at time zero.
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
40
–––
V
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
––– 0.037 –––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
1.4
1.75
m
Ω
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
gfs
Forward Transconductance
1170
–––
S
IDSS
Drain-to-Source Leakage Current
–––
20
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
100
Gate-to-Source Reverse Leakage
–––
-100
RG
Internal Gate Resistance
–––
2.2
–––
Ω
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Qg
Total Gate Charge
–––
160
240
Qgs
Gate-to-Source Charge
–––
40
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
68
–––
Qsync
Total Gate Charge Sync. (Qg - Qgd)
–––
92
–––
td(on)
Turn-On Delay Time
–––
23
–––
tr
Rise Time
–––
220
–––
td(off)
Turn-Off Delay Time
–––
90
–––
tf
Fall Time
–––
130
–––
Ciss
Input Capacitance
–––
9200
–––
Coss
Output Capacitance
–––
2020
–––
Crss
Reverse Transfer Capacitance
–––
1340
–––
Coss eff. (ER) Effective Output Capacitance (Energy Related) i ––– 2440 –––
Coss eff. (TR) Effective Output Capacitance (Time Related)h
–––
2690
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)d
VSD
Diode Forward Voltage
–––
1.3
V
trr
Reverse Recovery Time
–––
27
–––
TJ = 25°C
VR = 34V,
–––
31
–––
TJ = 125°C
IF = 195A
Qrr
Reverse Recovery Charge
–––
18
–––
TJ = 25°C
di/dt = 100A/μs g
–––
41
–––
TJ = 125°C
IRRM
Reverse Recovery Current
–––
1.2
–––
A
TJ = 25°C
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
A
ns
nC
–––
340
1310
nC
ns
pF
μA
nA
Conditions
VDS = 10V, ID = 195A
ID = 187A
VGS = 20V
VGS = -20V
MOSFET symbol
showing the
VDS =20V
Conditions
VGS = 10V g
VGS = 0V
VDS = 25V
= 1.0 MHz, See Fig. 5
VGS = 0V, VDS = 0V to 32V, See Fig. 11
VGS = 0V, VDS = 0V to 32V
TJ = 25°C, IS = 195A, VGS = 0V g
integral reverse
p-n junction diode.
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 5mAd
VGS = 10V, ID = 195A g
VDS = VGS, ID = 250μA
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
ID = 195A
RG = 2.7Ω
VGS = 10V g
VDD = 26V
ID = 187A, VDS =0V, VGS = 10V
相關(guān)PDF資料
PDF描述
AUIRFSL3004 195 A, 40 V, 0.00175 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
AUIRFS3004 195 A, 40 V, 0.00175 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AUIRFS3004TRR 195 A, 40 V, 0.00175 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AUIRFS3006TRR 195 A, 60 V, 0.0025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AUIRFS3006TRL 195 A, 60 V, 0.0025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
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