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參數(shù)資料
| 型號： | AUIRFR5305TR |
| 元件分類： | JFETs |
| 英文描述： | 31 A, 55 V, 0.065 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | ROHS COMPLIANT, PLASTIC, DPAK-3 |
| 文件頁數(shù)： | 6/13頁 |
| 文件大?。?/td> | 300K |
| 代理商： | AUIRFR5305TR |
AUIRFR/U5305
2
www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
ISD ≤ -16A, di/dt ≤ -280A/s, VDD ≤ V(BR)DSS,
TJ
≤ 175°C
VDD = -25V, starting TJ = 25°C, L = 2.1mH
RG = 25, IAS = -16A. (See Figure 12)
Pulse width ≤ 300s; duty cycle ≤ 2%.
S
D
G
S
D
G
This is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact.
Uses IRF5305 data and test conditions.
* *When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
*** Uses typical socket mount.
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
-55
–––
V
V(BR)DSS/TJ
Breakdown Voltage Temp. Coefficient
–––
-0.034
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
0.065
VGS(th)
Gate Threshold Voltage
-2.0
–––
-4.0
V
gfs
Forward Transconductance
8.0
–––
S
IDSS
Drain-to-Source Leakage Current
–––
-25
–––
-250
IGSS
Gate-to-Source Forward Leakage
–––
100
Gate-to-Source Reverse Leakage
–––
-100
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
Qg
Total Gate Charge
–––
63
Qgs
Gate-to-Source Charge
–––
13
Qgd
Gate-to-Drain ("Miller") Charge
–––
29
td(on)
Turn-On Delay Time
–––
14
–––
tr
Rise Time
–––
66
–––
td(off)
Turn-Off Delay Time
–––
39
–––
tf
Fall Time
–––
63
–––
LD
Internal Drain Inductance
Between lead,
6mm (0.25in.)
LS
Internal Source Inductance
from package
and center of die contact
Ciss
Input Capacitance
–––
1200
–––
Coss
Output Capacitance
–––
520
–––
Crss
Reverse Transfer Capacitance
–––
250
–––
Diode Characteristics
Parameter
Min.
Typ.
Max.
Units
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
–––
-1.3
V
trr
Reverse Recovery Time
–––
71
110
ns
Qrr
Reverse Recovery Charge
–––
170
250
nC
VGS = -20V
VGS = 20V
VDS = -44V
VDS = -25V, ID = -16A
h
ID = -16A
Conditions
RD = 1.6
See Fig.10
fh
VGS = 0V
VDS = -25V
= 1.0MHz,see Fig.5
h
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = -16A, VGS = 0V f
TJ = 25°C, IF = -16A
di/dt = 100A/s
fh
Conditions
VGS = 0V, ID = -250A
Reference to 25°C, ID = -1mA
VGS = -10V, ID = -16A
f
VDS = VGS, ID = -250A
VDS = -55V, VGS = 0V
VDS = -44V, VGS = 0V, TJ = 150°C
VGS = -10V See Fig.6 and 13 fh
VDD = -28V
ID = -16A
RG = 6.8
–––
A
-31
-110
pF
–––
A
nA
ns
nC
nH
–––
4.5
7.5
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