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  • 參數資料
    型號: AUIRFR4620
    元件分類: JFETs
    英文描述: 24 A, 200 V, 0.078 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
    封裝: ROHS COMPLIANT, PLASTIC, DPAK-3
    文件頁數: 11/12頁
    文件大?。?/td> 235K
    代理商: AUIRFR4620
    AUIRFR4620
    8
    www.irf.com
    Fig 23a. Switching Time Test Circuit
    Fig 23b. Switching Time Waveforms
    Fig 22b. Unclamped Inductive Waveforms
    Fig 22a. Unclamped Inductive Test Circuit
    tp
    V(BR)DSS
    IAS
    RG
    IAS
    0.01
    Ω
    tp
    D.U.T
    L
    VDS
    +
    - VDD
    DRIVER
    A
    15V
    20V
    VGS
    Fig 24a. Gate Charge Test Circuit
    Fig 24b. Gate Charge Waveform
    Vds
    Vgs
    Id
    Vgs(th)
    Qgs1 Qgs2
    Qgd
    Qgodr
    Fig 21.
    Peak Diode Recovery dv/dt Test Circuit for N-Channel
    HEXFET Power MOSFETs
    Circuit Layout Considerations
    Low Stray Inductance
    Ground Plane
    Low Leakage Inductance
    Current Transformer
    P.W.
    Period
    di/dt
    Diode Recovery
    dv/dt
    Ripple
    ≤ 5%
    Body Diode
    Forward Drop
    Re-Applied
    Voltage
    Reverse
    Recovery
    Current
    Body Diode Forward
    Current
    VGS=10V
    VDD
    ISD
    Driver Gate Drive
    D.U.T. ISD Waveform
    D.U.T. VDS Waveform
    Inductor Curent
    D =
    P.W.
    Period
    * VGS = 5V for Logic Level Devices
    *
    +
    -
    +
    -
    RG
    VDD
    dv/dt controlled by RG
    Driver same type as D.U.T.
    ISD controlled by Duty Factor "D"
    D.U.T. - Device Under Test
    D.U.T
    Inductor Current
    D.U.T.
    VDS
    ID
    IG
    3mA
    VGS
    .3
    μF
    50K
    Ω
    .2
    μF
    12V
    Current Regulator
    Same Type as D.U.T.
    Current Sampling Resistors
    +
    -
    VDS
    90%
    10%
    VGS
    td(on)
    tr
    td(off) tf
    VDS
    Pulse Width ≤ 1 s
    Duty Factor ≤ 0.1 %
    RD
    VGS
    RG
    D.U.T.
    10V
    +
    - VDD
    VGS
    相關PDF資料
    PDF描述
    AUIRFR4620TRL 24 A, 200 V, 0.078 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
    AUIRFR4620TRR 24 A, 200 V, 0.078 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
    AUIRFR4620TR 24 A, 200 V, 0.078 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
    AUIRFR48ZTRL 42 A, 55 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
    AUIRFR48ZTR 42 A, 55 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
    相關代理商/技術參數
    參數描述
    AUIRFR4620PBF 制造商:International Rectifier 功能描述:
    AUIRFR4620TR 功能描述:MOSFET AUTO 200V 1 N-CH HEXFET 78mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
    AUIRFR4620TRL 功能描述:MOSFET AUTO 200V 1 N-CH HEXFET 78mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
    AUIRFR4620TRPBF 制造商:International Rectifier 功能描述:
    AUIRFR4620TRR 功能描述:MOSFET AUTO 200V 1 N-CH HEXFET 78mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube