參數(shù)資料
型號(hào)： AUIRFR4105TRL
元件分類： JFETs
英文描述： 20 A, 55 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封裝： ROHS COMPLIANT, PLASTIC, DPAK-3
文件頁(yè)數(shù)： 5/12頁(yè)
文件大小： 238K
代理商： AUIRFR4105TRL
AUIRFR4105
2
www.irf.com
S
D
G
Notes:
VDD = 25V, starting TJ = 25°C, L = 410μH
RG = 25Ω, IAS = 16A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
ISD ≤ 16A, di/dt ≤ 420A/μs, VDD ≤ V(BR)DSS,
TJ
≤ 175°C.
Rθ is measured at Tj approximately 90°C.
Calculated continuous current based on maximum allowable
junction temperature; Package limitation current = 20A.
Pulse width ≤ 300μs; duty cycle ≤ 2%.
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
55
–––
V
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
–––
0.052
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
45
m
Ω
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
gfs
Forward Transconductance
6.5
–––
S
IDSS
Drain-to-Source Leakage Current
–––
25
μA
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
100
nA
Gate-to-Source Reverse Leakage
–––
-100
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Qg
Total Gate Charge
–––
34
Qgs
Gate-to-Source Charge
–––
6.8
nC
Qgd
Gate-to-Drain ("Miller") Charge
–––
14
td(on)
Turn-On Delay Time
–––
7.0
–––
tr
Rise Time
–––
49
–––
td(off)
Turn-Off Delay Time
–––
31
–––
ns
tf
Fall Time
–––
40
–––
LD
Internal Drain Inductance
–––
4.5
–––
Between lead,
nH
6mm (0.25in.)
LS
Internal Source Inductance
–––
7.5
–––
from package
and center of die contact
Ciss
Input Capacitance
–––
700
–––
Coss
Output Capacitance
–––
240
–––
pF
Crss
Reverse Transfer Capacitance
–––
100
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
27
g
(Body Diode)
A
ISM
Pulsed Source Current
–––
100
(Body Diode)
VSD
Diode Forward Voltage
–––
1.6
V
trr
Reverse Recovery Time
–––
57
86
ns
Qrr
Reverse Recovery Charge
–––
130
200
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
VDS = 25V, ID = 16A
ID = 16A
VDS = 44V
Conditions
RD = 1.8
Ω, See Fig. 10 f
VGS = 0V
VDS = 25V
= 1.0MHz, See Fig. 5
VGS = 20V
VGS = -20V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 16A, VGS = 0V f
TJ = 25°C, IF = 16A
di/dt = 100A/μs
f
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 16A f
VDS = VGS, ID = 250μA
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
Conditions
VGS = 10V, See Fig. 6 & 13 f
VDD = 28V
ID = 16A
RG = 18
Ω
相關(guān)PDF資料
PDF描述
AUIRFR4105TR 20 A, 55 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
AUIRFR4620 24 A, 200 V, 0.078 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
AUIRFR4620TRL 24 A, 200 V, 0.078 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
AUIRFR4620TRR 24 A, 200 V, 0.078 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
AUIRFR4620TR 24 A, 200 V, 0.078 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AUIRFR4105TRR 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 45mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRFR4105Z 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 24.5mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRFR4105ZTR 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 24.5mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRFR4105ZTRL 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 24.5mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRFR4105ZTRR 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 24.5mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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