參數(shù)資料
型號： AUIRF7736M2TR1
元件分類： JFETs
英文描述： 22 A, 40 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-5
文件頁數(shù)： 7/11頁
文件大小： 294K
代理商： AUIRF7736M2TR1
AUIRF7736M2TR/TR1
www.irf.com
5
Fig 7. Typical Threshold Voltage vs. Junction Temperature
Fig 8. Typical Source-Drain Diode Forward Voltage
Fig 9. Typical Forward Transconductance Vs. Drain Current
Fig 10. Typical Capacitance vs.Drain-to-Source Voltage
Fig.11 Typical Gate Charge vs.Gate-to-Source Voltage
Fig 12. Maximum Drain Current vs. Case Temperature
0
20406080
100
120
ID,Drain-to-Source Current (A)
0
50
100
150
200
250
G
fs
,F
or
w
ar
d
T
ra
ns
co
nd
uc
ta
nc
e
(S
)
TJ = 25°C
TJ = 175°C
VDS = 5V
380s PULSE WIDTH
1
10
100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
C
,C
ap
ac
ita
nc
e
(p
F
)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
-75 -50 -25 0
25 50 75 100 125 150 175
TJ , Temperature ( °C )
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V
G
S
(t
h)
,G
at
e
th
re
sh
ol
d
V
ol
ta
ge
(V
)
ID = 1.0A
ID = 1.0mA
ID = 250A
ID = 150A
0.3
0.5
0.7
0.9
1.1
1.3
VSD, Source-to-Drain Voltage (V)
1.0
10
100
1000
I S
D
,R
ev
er
se
D
ra
in
C
ur
re
nt
(A
)
TJ = -40°C
TJ = 25°C
TJ = 175°C
VGS = 0V
0
2040
6080
100
QG, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
V
G
S
,G
at
e-
to
-S
ou
rc
e
V
ol
ta
ge
(V
)
VDS= 32V
VDS= 20V
VDS= 8V
ID= 65A
25
50
75
100
125
150
175
TC , Case Temperature (°C)
0
20
40
60
80
100
120
I D
,
D
ra
in
C
ur
re
nt
(A
)
相關(guān)PDF資料
PDF描述
AUIRF7736M2TR 22 A, 40 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET
AUIRF7737L2TR 31 A, 40 V, 0.0019 ohm, N-CHANNEL, Si, POWER, MOSFET
AUIRF7737L2TR1 31 A, 40 V, 0.0019 ohm, N-CHANNEL, Si, POWER, MOSFET
AUIRF7738L2TR 35 A, 40 V, 0.0016 ohm, N-CHANNEL, Si, POWER, MOSFET
AUIRF7738L2TR1 35 A, 40 V, 0.0016 ohm, N-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AUIRF7737L2TR 功能描述:MOSFET 40V AUTOGRADE 1 N-CH HEXFET 7.9mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRF7737L2TR1 功能描述:MOSFET 40V AUTOGRADE 1 N-CH HEXFET 1.9mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRF7738L2TR 功能描述:MOSFET 40V AUTOGRADE 1 N-CH HEXFET 1.6mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRF7738L2TR1 功能描述:MOSFET 40V AUTOGRADE 1 N-CH HEXFET 1.6mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRF7739L2TR 功能描述:MOSFET 40V AUTOGRADE 1 N-CH HEXFET 1mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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