參數(shù)資料
型號： AUIRF4104STRR
元件分類： JFETs
英文描述： 75 A, 40 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ROHS COMPLIANT, D2PAK-3
文件頁數(shù)： 8/15頁
文件大?。?/td> 349K
代理商： AUIRF4104STRR
AUIRF4104/S
2
www.irf.com
S
D
G
Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
40
–––
V
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
–––
0.032
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
4.3
5.5
m
Ω
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
gfs
Forward Transconductance
63
–––
V
IDSS
Drain-to-Source Leakage Current
–––
20
μA
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
200
nA
Gate-to-Source Reverse Leakage
–––
-200
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
Qg
Total Gate Charge
–––
68
100
Qgs
Gate-to-Source Charge
–––
21
–––
nC
Qgd
Gate-to-Drain ("Miller") Charge
–––
27
–––
td(on)
Turn-On Delay Time
–––
16
–––
tr
Rise Time
–––
130
–––
td(off)
Turn-Off Delay Time
–––
38
–––
ns
tf
Fall Time
–––77–––
LD
Internal Drain Inductance
–––
4.5
–––
Between lead,
nH
6mm (0.25in.)
LS
Internal Source Inductance
–––
7.5
–––
from package
and center of die contact
Ciss
Input Capacitance
–––
3000
–––
Coss
Output Capacitance
–––
660
–––
Crss
Reverse Transfer Capacitance
–––
380
–––
pF
Coss
Output Capacitance
–––
2160
–––
Coss
Output Capacitance
–––
560
–––
Coss eff.
Effective Output Capacitance
–––
850
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
75
(Body Diode)
A
ISM
Pulsed Source Current
–––
470
(Body Diode)
VSD
Diode Forward Voltage
–––
1.3
V
trr
Reverse Recovery Time
–––
23
35
ns
Qrr
Reverse Recovery Charge
–––
6.8
10
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
VDS = 10V, ID = 75A
ID = 75A
VDS = 32V
Conditions
VGS = 10V e
VGS = 0V
VDS = 25V
= 1.0MHz
VGS = 20V
VGS = -20V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 75A, VGS = 0V e
TJ = 25°C, IF = 75A, VDD = 20V
di/dt = 100A/μs
e
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 75A e
VDS = VGS, ID = 250μA
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
VGS = 0V, VDS = 1.0V, = 1.0MHz
VGS = 0V, VDS = 32V, = 1.0MHz
VGS = 0V, VDS = 0V to 32V f
VGS = 10V e
VDD = 20V
ID = 75A
RG = 6.8 Ω
相關(guān)PDF資料
PDF描述
AUIRF4104STRL 75 A, 40 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET
AUIRF4104S 75 A, 40 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET
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AUIRF540ZSTRL 36 A, 100 V, 0.0265 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
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